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Improvement in Performance of InAs Surface Quantum Dot Heterostructure Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer
Improvement in Performance of InAs Surface Quantum Dot Heterostructure Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer
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Improvement in Performance of InAs Surface Quantum Dot Heterostructure Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer

Mantri, Manas Ranjan ; Panda, Debi Prasad ; Punetha, Deepak ; Pandey, Sushil Kumar ; Singh, Vivek Pratap ; Pandey, Saurabh Kumar ; Chakrabarti, Subhananda

IEEE sensors journal, 2023-07, Vol.23 (14), p.1-1 [Periódico revisado por pares]

New York: IEEE

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2
High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon
High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon
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High operating temperature mid-infrared InGaAs/GaAs submonolayer quantum dot quantum cascade detectors on silicon

Guo, Daqian ; Huang, Jian ; Benamara, Mourad ; Mazur, Yuriy I. ; Deng, Zhuo ; Salamo, Gregory J. ; Liu, Huiyun ; Chen, Baile ; Wu, Jiang

IEEE journal of quantum electronics, 2023-04, Vol.59 (2), p.1-1 [Periódico revisado por pares]

New York: IEEE

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3
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon
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Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao ; Siming Chen ; Suguo Huo ; Si Chen ; Jiang Wu ; Mingchu Tang ; Kennedy, Ken ; Wei Li ; Kumar, Saurabh ; Martin, Mickael ; Baron, Thierry ; Chaoyuan Jin ; Ross, Ian ; Seeds, Alwyn ; Huiyun Liu

IEEE journal of selected topics in quantum electronics, 2017-11, Vol.23 (6), p.1-10 [Periódico revisado por pares]

New York: IEEE

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4
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
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InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

Lee, A. D. ; Qi Jiang ; Mingchu Tang ; Yunyan Zhang ; Seeds, A. J. ; Huiyun Liu

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.1901107-1901107 [Periódico revisado por pares]

New York: IEEE

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5
Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers
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Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

Majid, Mohammed Abdul ; Childs, David T. D. ; Shahid, Hifsa ; Siming Chen ; Kennedy, Kenneth ; Airey, Robert J. ; Hogg, Richard A. ; Clarke, Edmund ; Howe, Patrick ; Spencer, Peter D. ; Murray, Ray

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1334-1342 [Periódico revisado por pares]

New York: IEEE

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6
Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si
Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si
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Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si

Zetian Mi ; Bhattacharya, P.

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1171-1179 [Periódico revisado por pares]

New York: IEEE

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7
The design, analysis, and cost estimation of a generic adder and subtractor using the layered T (LT) logic reduction methodology with a quantum-dot cellular-automata-based approach
The design, analysis, and cost estimation of a generic adder and subtractor using the layered T (LT) logic reduction methodology with a quantum-dot cellular-automata-based approach
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The design, analysis, and cost estimation of a generic adder and subtractor using the layered T (LT) logic reduction methodology with a quantum-dot cellular-automata-based approach

Mukherjee, Chiradeep ; Panda, Saradindu ; Mukhopadhyay, Asish Kumar ; Maji, Bansibadan

Journal of computational electronics, 2021-08, Vol.20 (4), p.1611-1624 [Periódico revisado por pares]

New York: Springer US

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8
Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights
Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights
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Near-Infrared Ultrawide Bandwidth LEDs Using InAs Quantum Dots of Equally Tuned Heights

Haffouz, S. ; Barrios, P. J. ; Poitras, D. ; Normandin, R.

IEEE photonics technology letters, 2012-10, Vol.24 (19), p.1677-1679

IEEE

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9
Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
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Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Garduño-Nolasco, Edson ; Carrington, Peter J ; Krier, Anthony ; Missous, Mohamed

IET optoelectronics, 2014-04, Vol.8 (2), p.71-75 [Periódico revisado por pares]

Stevenage: The Institution of Engineering and Technology

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10
Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping
Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping
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Evolution of Various Nanostructures and Preservation of Self-Assembled InAs Quantum Dots During GaAs Capping

Jihoon Lee ; Wang, Z.M. ; Dorogan, V.G. ; Mazur, Y.I. ; Salamo, G.J.

IEEE transactions on nanotechnology, 2010-03, Vol.9 (2), p.149-156 [Periódico revisado por pares]

New York: IEEE

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