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11
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Analysis of the linear kink effect in partially depleted SOI nMOSFETs
Material Type:
Conference Paper 		Add to e-Shelf

Analysis of the linear kink effect in partially depleted SOI nMOSFETs

Paula Ghedini Der Agopian João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

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12
Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation
Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation
Material Type:
Conference Paper 		Add to e-Shelf

Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation

João Antonio Martino 1959- Marcelo Antonio Pavanello; Eddy Simoen; Cor Claeys; International Symposium on Low Temperature Electronics (7. 2003 Orlando, USA)

Proceedings

Pennington The Electrochemical Society 2003

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13
Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
Material Type:
Book 		Add to e-Shelf

Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

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14
Simple method to extract the length dependent mobility degradation factor at 77 K
Simple method to extract the length dependent mobility degradation factor at 77 K
Material Type:
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Simple method to extract the length dependent mobility degradation factor at 77 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; Symposium Low Temperature Electronics and High Temperature Superconductivity (4th 1997 Montreal, Canada)

Claeys, C.L.; Raider, S.I.; Deen, M.J.; Brown, W.D.; Kirschman, R.K. 4. Symposium on Low Temperature Electronics and High Temperature Superconductivity: proceedings Pennington: The Electrochemical Society, 1997

Pennington The Electrochemical Society 1997

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15
Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations
Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations
Material Type:
Conference Paper 		Add to e-Shelf

Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; Conference of the Brazilian Microelectronics Society (11. 1996 Águas de Lindóia, SP)

Proceedings São Paulo : Sbmicro, 1996

São Paulo Sbmicro 1996

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16
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
Material Type:
Conference Paper 		Add to e-Shelf

Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

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17
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures
Material Type:
Book 		Add to e-Shelf

The influence of the interface trap densities on the extraction of the silicon film and front oxide thickness of SOI NMOS devices at low temperatures

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

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18
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures
Material Type:
Conference Paper 		Add to e-Shelf

Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (19. 2004 Porto Galinhas)

Santos, E. J. P.; Ribas, R. P.; Swart, J. eds Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9 Pennington : The Electrochemical Society, 2004.

Pennington The Electrochemical Society 2004

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19
Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs
Material Type:
Book 		Add to e-Shelf

Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs

João Antonio Martino 1959- J.M Rafi; A Mercha; Eddy Simoen; Cor Claeys; Symposium on High Purity Silicon (8 2004 Honolulu, Hawaii)

Claeys, C.L.; Watanabe, M.; Falster, R.; Stallhofer, P. 8. Symposium on High Purity Silicon: proceedings Pennington: The Electrochemical Society, 2004

Pennington The Electrochemical Society 2004

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20
Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation
Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation
Material Type:
Conference Paper 		Add to e-Shelf

Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; European Workshop on Low Temperature Electronics (6. 2004 Noordwijk, The Netherlands)

Proceedings

Noordwijk 2004

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