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1
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
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Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy

T. E. Lamas (Tomás Erikson) A. A Quivy (Alain André); S Martini; M J da Silva; J. R Leite (José Roberto); Brazilian Workshop on Semiconductor Physics (11. 2003 Fortaleza)

Book of Abstract Fortaleza : DF/UFC, 2003

Fortaleza DF/UFC 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
Large InAs/GaAs quantum dots optically active in the long-wavelength region
Large InAs/GaAs quantum dots optically active in the long-wavelength region
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Large InAs/GaAs quantum dots optically active in the long-wavelength region

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto); International Conference on Defects in Semiconductors (22. 2003 Aarhus)

Book of Abstracts Amsterdam : Elsevier Science, 2003

Amsterdam Elsevier Science 2003

Item não circula. Consulte sua biblioteca.(Acessar)

3
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
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Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

S Martini J E Manzoli; Alain Andre Quivy

Journal of Vacuum Science & Technology B v. 28, n.2, 2010

New York 2010

Acesso online

4
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
Material Type:
Artigo 		Adicionar ao Meu Espaço

Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

S Martini J E Manzoli; Alain Andre Quivy

Journal of Vacuum Science & Technology B v. 28, n.2, 2010

New York 2010

Acesso online

5
The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells
The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells
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The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells

I. R Pagnossin Emílio Carlos Nelli Silva 1968-; A. A Quivy (Alain André); S Martini; C. S Sergio; J. R Leite (José Roberto); Encontro Nacional de Fisica da Matéria Condensada (27. 2004 Poços de Caldas, MG)

Resumos São Paulo : SBF, 2004

São Paulo SBF 2004

Acesso online

6
Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
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Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy

S. Martini (Sandro) A. A Quivy (Alain André); J. R Leite (José Roberto); C Lange; W Richter; V E Tokranov; Encontro Nacional de Física da Matéria Condensada (23. 2000 São Lourenço)

Resumos São Paulo : SBF, 2000

São Paulo SBF 2000

Item não circula. Consulte sua biblioteca.(Acessar)

7
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
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Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces

A. A. Quivy (Alain André) S Martini; T. E Lamas (Tomás Erikson); M. J. da Silva; Euzi Conceicao Fernandes da Silva; Brazilian Workshop on Semiconductor Physics (11. 2003 Fortaleza)

Book of Abstract Fortaleza : DF/UFC, 2003

Fortaleza DF/UFC 2003

Item não circula. Consulte sua biblioteca.(Acessar)

8
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
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Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Vacuum Science & Technology B New York v. 18, n. 4, p. 1991-1996, 2000

New York 2000

Acesso online

9
Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
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Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates

A. Tabata S Martini (Sandro); A. A Quivy (Alain André); Artemis Marti Ceschin; J. R Leite (José Roberto)

Superlattices and Microstructures London v. 25, n. 1/2, p. 405-411, 1999

London 1999

Item não circula. Consulte sua biblioteca.(Acessar)

10
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Applied Physics Woodbury v. 90, n. 5, p. 2280-2289, 2001

Woodbury 2001

Acesso online

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Deste Autor:

  1. Quivy, A
  2. Martini, S
  3. Leite, J
  4. Silva, M
  5. Silva, E

Neste Assunto:

  1. Estrutura Eletrônica
  2. Fotoluminescência
  3. Superfície Física
  4. Semicondutores
  5. Matéria Condensada

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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