Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structureCHAHARA, K.-I ; OHNO, T ; KASAI, M ; KOZONO, YApplied physics letters, 1993-10, Vol.63 (14), p.1990-1992 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
12 |
Material Type: Artigo
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Semiconducting polymer-buckminsterfullerene heterojunctions : diodes, photodiodes, and photovoltaic cellsSARICIFTCI, N. S ; BRAUN, D ; ZHANG, C ; SRDANOV, V. I ; HEEGER, A. J ; STUCKY, G ; WUDL, FApplied physics letters, 1993-02, Vol.62 (6), p.585-587 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
13 |
Material Type: Artigo
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High-power InGaN/GaN double-heterostructure violet light emitting diodesNAKAMURA, S ; SENOH, M ; MUKAI, TApplied physics letters, 1993-05, Vol.62 (19), p.2390-2392 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
14 |
Material Type: Artigo
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Visible light emission from semiconducting polymer diodesBRAUN, D ; HEEGER, A. JApplied physics letters, 1991-05, Vol.58 (18), p.1982-1984 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
15 |
Material Type: Artigo
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NEW PRINCIPLE FOR OPTICAL FILTERSMAGNUSSON, R ; WANG, SSApplied physics letters, 1992-08, Vol.61 (9), p.1022-1024 [Periódico revisado por pares]WOODBURY: Amer Inst PhysicsTexto completo disponível |
16 |
Material Type: Artigo
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Fabrication of 5-7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resistChen, Wei ; Ahmed, HaroonApplied physics letters, 1993-03, Vol.62 (13), p.1499-1501 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
17 |
Material Type: Artigo
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COMBINED SHEAR FORCE AND NEAR-FIELD SCANNING OPTICAL MICROSCOPYBETZIG, E ; FINN, PL ; WEINER, JSApplied physics letters, 1992-05, Vol.60 (20), p.2484-2486 [Periódico revisado por pares]WOODBURY: Amer Inst PhysicsTexto completo disponível |
18 |
Material Type: Artigo
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POLY(P-PHENYLENEVINYLENE) LIGHT-EMITTING-DIODES - ENHANCED ELECTROLUMINESCENT EFFICIENCY THROUGH CHARGE CARRIER CONFINEMENTBROWN, AR ; BRADLEY, DDC ; BURROUGHES, JH ; FRIEND, RH ; GREENHAM, NC ; BURN, PL ; HOLMES, AB ; KRAFT, AApplied physics letters, 1992-12, Vol.61 (23), p.2793-2795 [Periódico revisado por pares]WOODBURY: Amer Inst PhysicsTexto completo disponível |
19 |
Material Type: Artigo
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Porous silicon formation : a quantum wire effectLEHMANN, V ; GÖSELE, UApplied physics letters, 1991-02, Vol.58 (8), p.856-858 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
20 |
Material Type: Artigo
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Totally relaxed GexSi1-x layers with low threading dislocation densities grown on Si substratesFITZGERALD, E. A ; XIE, Y.-H ; GREEN, M. L ; BRASEN, D ; KORTAN, A. R ; MICHEL, J ; MII, Y.-J ; WEIR, B. EApplied physics letters, 1991-08, Vol.59 (7), p.811-813 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |