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1
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

LEONARD, D ; KRISHNAMURTHY, M ; REAVES, C. M ; DENBAARS, S. P ; PETROFF, P. M

Applied physics letters, 1993-12, Vol.63 (23), p.3203-3205 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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2
Porous silicon formation : a quantum wire effect
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Porous silicon formation : a quantum wire effect

LEHMANN, V ; GÖSELE, U

Applied physics letters, 1991-02, Vol.58 (8), p.856-858 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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3
Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
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Reactive ion etching of gallium nitride in silicon tetrachloride plasmas

ADESIDA, I ; MAHAJAN, A ; ANDIDEH, E ; ASIF KHAN, M ; OLSEN, D. T ; KUZNIA, J. N

Applied physics letters, 1993-11, Vol.63 (20), p.2777-2779 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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4
Generation of diamond nuclei by electric field in plasma chemical vapor deposition
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Generation of diamond nuclei by electric field in plasma chemical vapor deposition

YUGO, S ; KANAI, T ; KIMURA, T ; MUTO, T

Applied physics letters, 1991-03, Vol.58 (10), p.1036-1038 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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5
Catalytic growth of carbon microtubules with fullerene structure
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Catalytic growth of carbon microtubules with fullerene structure

JOSE-YACAMAN, M ; MIKI-YOSHIDA, M ; RENDON, L ; SANTIESTEBAN, J. G

Applied physics letters, 1993-01, Vol.62 (2), p.202-204 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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6
Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices
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Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlattices

DALLESASSE, J. M ; HOLONYAK, N. JR ; SUGG, A. R ; RICHARD, T. A ; EL-ZEIN, N

Applied physics letters, 1990-12, Vol.57 (26), p.2844-2846 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
Magnetron sputter deposition with high levels of metal ionization
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Magnetron sputter deposition with high levels of metal ionization

ROSSNAGEL, S. M ; HOPWOOD, J

Applied physics letters, 1993-12, Vol.63 (24), p.3285-3287 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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8
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

LEI, T ; FANCIULLI, M ; MOLNAR, R. J ; MOUSTAKAS, T. D ; GRAHAM, R. J ; SCANION, J

Applied physics letters, 1991-08, Vol.59 (8), p.944-946 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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9
Catalytic growth of carbon microtubules with fullerene structure
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Catalytic growth of carbon microtubules with fullerene structure

JOSE-YACAMAN, M ; MIKI-YOSHIDA, M ; RENDON, L ; SANTIESTEBAN, J. G

Applied physics letters, 1993-02, Vol.62 (6), p.657-659 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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10
Novel metalorganic chemical vapor deposition system for GaN growth
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Novel metalorganic chemical vapor deposition system for GaN growth

NAKAMURA, S ; HARADA, Y ; SENO, M

Applied physics letters, 1991-05, Vol.58 (18), p.2021-2023 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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