Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesLEONARD, D ; KRISHNAMURTHY, M ; REAVES, C. M ; DENBAARS, S. P ; PETROFF, P. MApplied physics letters, 1993-12, Vol.63 (23), p.3203-3205 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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Porous silicon formation : a quantum wire effectLEHMANN, V ; GÖSELE, UApplied physics letters, 1991-02, Vol.58 (8), p.856-858 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Reactive ion etching of gallium nitride in silicon tetrachloride plasmasADESIDA, I ; MAHAJAN, A ; ANDIDEH, E ; ASIF KHAN, M ; OLSEN, D. T ; KUZNIA, J. NApplied physics letters, 1993-11, Vol.63 (20), p.2777-2779 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Generation of diamond nuclei by electric field in plasma chemical vapor depositionYUGO, S ; KANAI, T ; KIMURA, T ; MUTO, TApplied physics letters, 1991-03, Vol.58 (10), p.1036-1038 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Catalytic growth of carbon microtubules with fullerene structureJOSE-YACAMAN, M ; MIKI-YOSHIDA, M ; RENDON, L ; SANTIESTEBAN, J. GApplied physics letters, 1993-01, Vol.62 (2), p.202-204 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Hydrolyzation oxidation of AlxGa1-xAs-AlAs-GaAs quantum well heterostructures and superlatticesDALLESASSE, J. M ; HOLONYAK, N. JR ; SUGG, A. R ; RICHARD, T. A ; EL-ZEIN, NApplied physics letters, 1990-12, Vol.57 (26), p.2844-2846 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Magnetron sputter deposition with high levels of metal ionizationROSSNAGEL, S. M ; HOPWOOD, JApplied physics letters, 1993-12, Vol.63 (24), p.3285-3287 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconLEI, T ; FANCIULLI, M ; MOLNAR, R. J ; MOUSTAKAS, T. D ; GRAHAM, R. J ; SCANION, JApplied physics letters, 1991-08, Vol.59 (8), p.944-946 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Catalytic growth of carbon microtubules with fullerene structureJOSE-YACAMAN, M ; MIKI-YOSHIDA, M ; RENDON, L ; SANTIESTEBAN, J. GApplied physics letters, 1993-02, Vol.62 (6), p.657-659 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Novel metalorganic chemical vapor deposition system for GaN growthNAKAMURA, S ; HARADA, Y ; SENO, MApplied physics letters, 1991-05, Vol.58 (18), p.2021-2023 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |