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1 |
Material Type: Artigo
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Multi-functional dielectric elastomer artificial muscles for soft and smart machinesAnderson, Iain A. ; Gisby, Todd A. ; McKay, Thomas G. ; O’Brien, Benjamin M. ; Calius, Emilio P.Journal of applied physics, 2012-08, Vol.112 (4) [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
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Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remediesVerzellesi, Giovanni ; Saguatti, Davide ; Meneghini, Matteo ; Bertazzi, Francesco ; Goano, Michele ; Meneghesso, Gaudenzio ; Zanoni, EnricoJournal of applied physics, 2013-08, Vol.114 (7) [Periódico revisado por pares]Texto completo disponível |
3 |
Material Type: Artigo
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Combined study of the ground and unoccupied electronic states of graphite by electron energy-loss spectroscopyFeng, Zhenbao ; Löffler, Stefan ; Eder, Franz ; Su, Dangsheng ; Meyer, Jannik C. ; Schattschneider, PeterJournal of applied physics, 2013-11, Vol.114 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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A high-performance dielectric elastomer consisting of bio-based polyester elastomer and titanium dioxide powderYang, Dan ; Tian, Ming ; Dong, Yingchao ; Kang, Hailan ; Gong, Daolin ; Zhang, LiqunJournal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Al2O3/TiO2 stack layers for effective surface passivation of crystalline siliconSuh, Dongchul ; Choi, Duk-Yong ; Weber, Klaus J.Journal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]Texto completo disponível |
6 |
Material Type: Artigo
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Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistorsHori, Y. ; Yatabe, Z. ; Hashizume, T.Journal of applied physics, 2013-12, Vol.114 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor depositionLiu, X. ; Kim, J. ; Yeluri, R. ; Lal, S. ; Li, H. ; Lu, J. ; Keller, S. ; Mazumder, B. ; Speck, J. S. ; Mishra, U. K.Journal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]Texto completo disponível |
8 |
Material Type: Artigo
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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistorsChoi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, SamuelJournal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
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Epoxy composites filled with high surface area-carbon fillers: Optimization of electromagnetic shielding, electrical, mechanical, and thermal propertiesKuzhir, P. ; Paddubskaya, A. ; Plyushch, A. ; Volynets, N. ; Maksimenko, S. ; Macutkevic, J. ; Kranauskaite, I. ; Banys, J. ; Ivanov, E. ; Kotsilkova, R. ; Celzard, A. ; Fierro, V. ; Zicans, J. ; Ivanova, T. ; Merijs Meri, R. ; Bochkov, I. ; Cataldo, A. ; Micciulla, F. ; Bellucci, S. ; Lambin, PhJournal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodesYan, Dawei ; Jiao, Jinping ; Ren, Jian ; Yang, Guofeng ; Gu, XiaofengJournal of applied physics, 2013-10, Vol.114 (14) [Periódico revisado por pares]Texto completo disponível |