Trivacancy in silicon: A combined DLTS and ab-initio modeling study

MARKEVICH, V. P ; PEAKER, A. R ; SVENSSON, B. G ; LASTOVSKII, S. B ; MURIN, L. I ; COUTINHO, J ; MARKEVICH, A. V ; TORRES, V. J. B ; BRIDDON, P. R ; DOBACZEWSKI, L ; MONAKHOV, E. V

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4565-4567 [Periódico revisado por pares]

Kidlington: Elsevier

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