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Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
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Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks

Sakai, Joe ; Bavencoffe, Maxime ; Negulescu, Beatrice ; Limelette, Patrice ; Wolfman, Jérôme ; Tateyama, Akinori ; Funakubo, Hiroshi

Journal of applied physics, 2019-03, Vol.125 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets
Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets
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Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets

Inoue, Takeshi ; Hiramatsu, Hidenori ; Hosono, Hideo ; Kamiya, Toshio

Journal of applied physics, 2015-11, Vol.118 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Introduction of strain-relaxed 90° domain structure by lattice mismatch in tetragonal ferroelectric (Bi,K)TiO3 epitaxial films grown hydrothermally below Curie temperature
Introduction of strain-relaxed 90° domain structure by lattice mismatch in tetragonal ferroelectric (Bi,K)TiO3 epitaxial films grown hydrothermally below Curie temperature
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Introduction of strain-relaxed 90° domain structure by lattice mismatch in tetragonal ferroelectric (Bi,K)TiO3 epitaxial films grown hydrothermally below Curie temperature

Kubota, Rurika ; Hu, Yuxian ; Shiraishi, Takahisa ; Tateyama, Akinori ; Ito, Yoshiharu ; Kurosawa, Minoru ; Funakubo, Hiroshi

Journal of applied physics, 2023-12, Vol.134 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Growth mechanism and domain structure study on epitaxial BiFeO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3
Growth mechanism and domain structure study on epitaxial BiFeO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3
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Growth mechanism and domain structure study on epitaxial BiFeO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3

Bae, In-Tae ; Yasui, Shintaro ; Ichinose, Tomohiro ; Itoh, Mitsuru ; Shiraishi, Takahisa ; Kiguchi, Takanori ; Naganuma, Hiroshi

Journal of applied physics, 2020-06, Vol.127 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O3 films
Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O3 films
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Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O3 films

Yamada, Tomoaki ; Yasumoto, Jun ; Ito, Daisuke ; Sakata, Osami ; Imai, Yasuhiko ; Kiguchi, Takanori ; Shiraishi, Takahisa ; Shimizu, Takao ; Funakubo, Hiroshi ; Yoshino, Masahito ; Nagasaki, Takanori

Journal of applied physics, 2015-08, Vol.118 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature
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Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

Ohmori, Hideto ; Hatori, Tomoya ; Nakagawa, Shigeki

Journal of applied physics, 2008-04, Vol.103 (7), p.07A911-07A911-3 [Periódico revisado por pares]

United States: American Institute of Physics

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7
Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films
Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films
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Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films

Suzuki, Ippei ; Naito, Tomoyuki ; Itoh, Mitsuru ; Sato, Tetsuya ; Taniyama, Tomoyasu

Journal of applied physics, 2011-04, Vol.109 (7), p.07C717-07C717-3 [Periódico revisado por pares]

United States: American Institute of Physics

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8
Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy
Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy
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Controlled polarity of sputter-deposited aluminum nitride on metals observed by aberration corrected scanning transmission electron microscopy

Harumoto, T. ; Sannomiya, T. ; Matsukawa, Y. ; Muraishi, S. ; Shi, J. ; Nakamura, Y. ; Sawada, H. ; Tanaka, T. ; Tanishiro, Y. ; Takayanagi, K.

Journal of applied physics, 2013-02, Vol.113 (8) [Periódico revisado por pares]

United States

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9
Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3–BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions
Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3–BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions
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Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3–BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions

Ishihama, Keisuke ; Shimizu, Takao ; Yamaoka, Wakiko ; Tsurumaru, Risako ; Yoshimura, Shintaro ; Sato, Yusuke ; Funakubo, Hiroshi

Journal of applied physics, 2021-10, Vol.130 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10-30 nm grain size prepared by chemical vapor deposition
Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10-30 nm grain size prepared by chemical vapor deposition
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Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10-30 nm grain size prepared by chemical vapor deposition

Michaelson, Sh ; Stacey, A. ; Orwa, J. ; Cimmino, A. ; Prawer, S. ; Cowie, B. C. C. ; Williams, O. A. ; Gruen, D. M. ; Hoffman, A.

Journal of applied physics, 2010-05, Vol.107 (9), p.093521-093521-7 [Periódico revisado por pares]

American Institute of Physics

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