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Refinado por: Nome da Publicação: Semiconductor Science and Technology remover tipo de recurso: Artigos remover
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1
An introduction to InP-based generic integration technology
An introduction to InP-based generic integration technology
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An introduction to InP-based generic integration technology

Smit, Meint ; Leijtens, Xaveer ; Ambrosius, Huub ; Bente, Erwin ; van der Tol, Jos ; Smalbrugge, Barry ; de Vries, Tjibbe ; Geluk, Erik-Jan ; Bolk, Jeroen ; van Veldhoven, Rene ; Augustin, Luc ; Thijs, Peter ; D'Agostino, Domenico ; Rabbani, Hadi ; Lawniczuk, Katarzyna ; Stopinski, Stanislaw ; Tahvili, Saeed ; Corradi, Antonio ; Kleijn, Emil ; Dzibrou, Dzmitry ; Felicetti, Manuela ; Bitincka, Elton ; Moskalenko, Valentina ; Zhao, Jing ; Santos, Rui ; Gilardi, Giovanni ; Yao, Weiming ; Williams, Kevin ; Stabile, Patty ; Kuindersma, Piet ; Pello, Josselin ; Bhat, Srivathsa ; Jiao, Yuqing ; Heiss, Dominik ; Roelkens, Gunther ; Wale, Mike ; Firth, Paul ; Soares, Francisco ; Grote, Norbert ; Schell, Martin ; Debregeas, Helene ; Achouche, Mohand ; Gentner, Jean-Louis ; Bakker, Arjen ; Korthorst, Twan ; Gallagher, Dominic ; Dabbs, Andrew ; Melloni, Andrea ; Morichetti, Francesco ; Melati, Daniele ; Wonfor, Adrian ; Penty, Richard ; Broeke, Ronald ; Musk, Bob ; Robbins, Dave

Semiconductor science and technology, 2014-08, Vol.29 (8), p.83001 [Periódico revisado por pares]

IOP Publishing

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2
Single and periodically Si Delta-doped Inp grown by Lp-movpe
Single and periodically Si Delta-doped Inp grown by Lp-movpe
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Single and periodically Si Delta-doped Inp grown by Lp-movpe

B Yavich P. L Souza; M Pamplona-Pires; André Bohomoletz Henriques; L. C. D Gonçalves

Semiconductor Science and Technology v. 12, p. 481-484, 1997

1997

Item não circula. Consulte sua biblioteca.(Acessar)

3
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
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Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling

L. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B Yavich

Semiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997

Bristol 1997

Item não circula. Consulte sua biblioteca.(Acessar)

4
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
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Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'

S C P Rodrigues A L Rosa; Luísa Maria Ribeiro Scolfaro; Dmitri Beliaev; J. R Leite (José Roberto); R Enderlein; J L A Alves

Semiconductor Science and Technology v. 13, p. 981-988, 1998

1998

Item não circula. Consulte sua biblioteca.(Acessar)

5
Review of SiC crystal growth technology
Review of SiC crystal growth technology
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Review of SiC crystal growth technology

Wellmann, Peter J

Semiconductor science and technology, 2018-10, Vol.33 (10), p.103001 [Periódico revisado por pares]

IOP Publishing

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6
β-Ga2O3 for wide-bandgap electronics and optoelectronics
β-Ga2O3 for wide-bandgap electronics and optoelectronics
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β-Ga2O3 for wide-bandgap electronics and optoelectronics

Galazka, Zbigniew

Semiconductor science and technology, 2018-10, Vol.33 (11) [Periódico revisado por pares]

IOP Publishing

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7
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues
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Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

Noé, Pierre ; Vallée, Christophe ; Hippert, Françoise ; Fillot, Frédéric ; Raty, Jean-Yves

Semiconductor science and technology, 2018-01, Vol.33 (1), p.13002 [Periódico revisado por pares]

IOP Publishing

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8
Advances in group III-nitride-based deep UV light-emitting diode technology
Advances in group III-nitride-based deep UV light-emitting diode technology
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Advances in group III-nitride-based deep UV light-emitting diode technology

Kneissl, M ; Kolbe, T ; Chua, C ; Kueller, V ; Lobo, N ; Stellmach, J ; Knauer, A ; Rodriguez, H ; Einfeldt, S ; Yang, Z ; Johnson, N M ; Weyers, M

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014036 [Periódico revisado por pares]

IOP Publishing

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9
Recent progress in Ga2O3 power devices
Recent progress in Ga2O3 power devices
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Recent progress in Ga2O3 power devices

Higashiwaki, Masataka ; Sasaki, Kohei ; Murakami, Hisashi ; Kumagai, Yoshinao ; Koukitu, Akinori ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

Semiconductor science and technology, 2016-01, Vol.31 (3) [Periódico revisado por pares]

IOP Publishing

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10
Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)
Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)
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Corrigendum: Design considerations of biaxially tensile-strained germanium-on-silicon lasers (2016 Semiconductor Science and Technology 31 065015)

Li, Xiyue ; Xia, Guangrui (Maggie)

Semiconductor science and technology, 2016-09, Vol.31 (9), p.99501 [Periódico revisado por pares]

IOP Publishing

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Deste Autor:

  1. Henriques, A
  2. Martino, J
  3. Leite, J
  4. Agopian, P
  5. Gonçalves, L

Neste Assunto:

  1. Physics
  2. Materials Science
  3. Technology
  4. Engineering
  5. Engineering, Electrical & Electronic

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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