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1 |
Material Type: Artigo
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An introduction to InP-based generic integration technologySmit, Meint ; Leijtens, Xaveer ; Ambrosius, Huub ; Bente, Erwin ; van der Tol, Jos ; Smalbrugge, Barry ; de Vries, Tjibbe ; Geluk, Erik-Jan ; Bolk, Jeroen ; van Veldhoven, Rene ; Augustin, Luc ; Thijs, Peter ; D'Agostino, Domenico ; Rabbani, Hadi ; Lawniczuk, Katarzyna ; Stopinski, Stanislaw ; Tahvili, Saeed ; Corradi, Antonio ; Kleijn, Emil ; Dzibrou, Dzmitry ; Felicetti, Manuela ; Bitincka, Elton ; Moskalenko, Valentina ; Zhao, Jing ; Santos, Rui ; Gilardi, Giovanni ; Yao, Weiming ; Williams, Kevin ; Stabile, Patty ; Kuindersma, Piet ; Pello, Josselin ; Bhat, Srivathsa ; Jiao, Yuqing ; Heiss, Dominik ; Roelkens, Gunther ; Wale, Mike ; Firth, Paul ; Soares, Francisco ; Grote, Norbert ; Schell, Martin ; Debregeas, Helene ; Achouche, Mohand ; Gentner, Jean-Louis ; Bakker, Arjen ; Korthorst, Twan ; Gallagher, Dominic ; Dabbs, Andrew ; Melloni, Andrea ; Morichetti, Francesco ; Melati, Daniele ; Wonfor, Adrian ; Penty, Richard ; Broeke, Ronald ; Musk, Bob ; Robbins, DaveSemiconductor science and technology, 2014-08, Vol.29 (8), p.83001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Anisotropy of the cyclotron mass in superlattices containing two populated minibandsAndré Bohomoletz Henriques P. L Souza; B YavichSemiconductor Science and Technology Bristol v. 16, n. 1, p. 1-6, 2001Bristol 2001Acesso online |
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Material Type: Artigo
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Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrateD G Pacheco-Salazar J. R Leite (José Roberto); F Cerdeira; E A Meneses; S F Li; D J As; K LischkaSemiconductor Science and Technology v. 21, n. 7, p. 846-851, 2006Bristol 2006Acesso online |
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Material Type: Artigo
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Structure evaluation of submicrometre silicon chips removed by diamond turningRenato Goulart Jasinevicius Jaime Gilberto Duduch; Paulo Sérgio PizaniSemiconductor Science and Technology London v. 22, n. 5, p. 561-573, May 2007London 2007Acesso online |
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Material Type: Artigo
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Review of SiC crystal growth technologyWellmann, Peter JSemiconductor science and technology, 2018-10, Vol.33 (10), p.103001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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β-Ga2O3 for wide-bandgap electronics and optoelectronicsGalazka, ZbigniewSemiconductor science and technology, 2018-10, Vol.33 (11) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Phase-change materials for non-volatile memory devices: from technological challenges to materials science issuesNoé, Pierre ; Vallée, Christophe ; Hippert, Françoise ; Fillot, Frédéric ; Raty, Jean-YvesSemiconductor science and technology, 2018-01, Vol.33 (1), p.13002 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Advances in group III-nitride-based deep UV light-emitting diode technologyKneissl, M ; Kolbe, T ; Chua, C ; Kueller, V ; Lobo, N ; Stellmach, J ; Knauer, A ; Rodriguez, H ; Einfeldt, S ; Yang, Z ; Johnson, N M ; Weyers, MSemiconductor science and technology, 2011-01, Vol.26 (1), p.014036 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Recent progress in Ga2O3 power devicesHigashiwaki, Masataka ; Sasaki, Kohei ; Murakami, Hisashi ; Kumagai, Yoshinao ; Koukitu, Akinori ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuSemiconductor science and technology, 2016-01, Vol.31 (3) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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If it's pinched it's a memristorChua, LeonSemiconductor science and technology, 2014-10, Vol.29 (10), p.104001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |