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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Iwasaki, Tatsuya ; Itagaki, Naho ; Den, Tohru ; Kumomi, Hideya ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Applied physics letters, 2007-06, Vol.90 (24), p.242114-242114-3 [Periódico revisado por pares]

American Institute of Physics

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12
Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature
Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature
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Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature

Yasuoka, Shinnosuke ; Mizutani, Ryoichi ; Ota, Reika ; Shiraishi, Takahisa ; Shimizu, Takao ; Okamoto, Kazuki ; Uehara, Masato ; Yamada, Hiroshi ; Akiyama, Morito ; Funakubo, Hiroshi

Applied physics letters, 2023-11, Vol.123 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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13
Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
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Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires

Li, Qiming ; Wang, George T.

Applied physics letters, 2010-11, Vol.97 (18) [Periódico revisado por pares]

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14
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

Kioupakis, Emmanouil ; Rinke, Patrick ; Delaney, Kris T. ; Van de Walle, Chris G.

Applied physics letters, 2011-04, Vol.98 (16) [Periódico revisado por pares]

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15
High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb
High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb
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High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Tu, Nguyen Thanh ; Hai, Pham Nam ; Anh, Le Duc ; Tanaka, Masaaki

Applied physics letters, 2016-05, Vol.108 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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16
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
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Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films

Shimizu, Takao ; Mimura, Takanori ; Kiguchi, Takanori ; Shiraishi, Takahisa ; Konno, Toyohiko ; Katsuya, Yoshio ; Sakata, Osami ; Funakubo, Hiroshi

Applied physics letters, 2018-11, Vol.113 (21) [Periódico revisado por pares]

Melville: American Institute of Physics

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17
Temperature dependent band gap in PbX (X = S, Se, Te)
Temperature dependent band gap in PbX (X = S, Se, Te)
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Temperature dependent band gap in PbX (X = S, Se, Te)

Gibbs, Zachary M. ; Kim, Hyoungchul ; Wang, Heng ; White, Robert L. ; Drymiotis, Fivos ; Kaviany, Massoud ; Jeffrey Snyder, G.

Applied physics letters, 2013-12, Vol.103 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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18
Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection
Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection
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Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

Ryzhii, M. ; Ryzhii, V. ; Otsuji, T. ; Mitin, V. ; Shur, M. S.

Applied physics letters, 2022-03, Vol.120 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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19
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes
Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes
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Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric- insulator-semiconductor diodes

Fujisaki, Sumiko ; Ishiwara, Hiroshi ; Fujisaki, Yoshihisa

Applied physics letters, 2007-04, Vol.90 (16), p.162902-162902-3 [Periódico revisado por pares]

American Institute of Physics

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20
Perfectly aligned shallow ensemble nitrogen-vacancy centers in (111) diamond
Perfectly aligned shallow ensemble nitrogen-vacancy centers in (111) diamond
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Perfectly aligned shallow ensemble nitrogen-vacancy centers in (111) diamond

Ishiwata, Hitoshi ; Nakajima, Makoto ; Tahara, Kosuke ; Ozawa, Hayato ; Iwasaki, Takayuki ; Hatano, Mutsuko

Applied physics letters, 2017-07, Vol.111 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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