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Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
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Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

Dagnelund, D. ; Vorona, I. P. ; Vlasenko, L. S. ; Wang, X. J. ; Utsumi, A. ; Furukawa, Y. ; Wakahara, A. ; Yonezu, H. ; Buyanova, I. A. ; Chen, W. M.

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), p.115334, Article 115334 [Periódico revisado por pares]

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Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy
Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy
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Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy

Wakahara, Akihiro ; Genba, Jun ; Yoshida, Akira ; Saiki, Hisao

Journal of crystal growth, 2000-12, Vol.221 (1), p.305-310 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
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Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix

ROUVIMOV, S ; LILIENTAL-WEBER, Z ; SWIDER, W ; WASHBURN, J ; WEBER, E. R ; SASAKI, A ; WAKAHARA, A ; FURKAWA, Y ; ABE, T ; NODA, S

Journal of electronic materials, 1998-05, Vol.27 (5), p.427-432 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

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