Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunctionDagnelund, D. ; Vorona, I. P. ; Vlasenko, L. S. ; Wang, X. J. ; Utsumi, A. ; Furukawa, Y. ; Wakahara, A. ; Yonezu, H. ; Buyanova, I. A. ; Chen, W. M.Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), p.115334, Article 115334 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxyWakahara, Akihiro ; Genba, Jun ; Yoshida, Akira ; Saiki, HisaoJournal of crystal growth, 2000-12, Vol.221 (1), p.305-310 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
3 |
Material Type: Ata de Congresso
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Crystal growth and characterization of rare-earth doped Na2CaLu2F10Wakahara, S. ; Furuya, Y. ; Yanagida, T. ; Yokota, Y. ; Pejchal, J. ; Sugiyama, M. ; Kawaguchi, N. ; Totsuka, D. ; Yoshikawa, A.2011 IEEE Nuclear Science Symposium Conference Record, 2011, p.1586-1590IEEETexto completo disponível |
4 |
Material Type: Artigo
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Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrixROUVIMOV, S ; LILIENTAL-WEBER, Z ; SWIDER, W ; WASHBURN, J ; WEBER, E. R ; SASAKI, A ; WAKAHARA, A ; FURKAWA, Y ; ABE, T ; NODA, SJournal of electronic materials, 1998-05, Vol.27 (5), p.427-432 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
5 |
Material Type: Artigo
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Sn submonolayer-mediated Ge heteroepitaxy on Si(001)Lin, XW ; Liliental-Weber, Z ; Washburn, J ; Weber, ER ; Sasaki, A ; Wakahara, A ; Hasegawa, TPhysical review. B, Condensed matter, 1995-12, Vol.52 (23), p.16581-16587United StatesTexto completo disponível |