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1
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys
Material Type:
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First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 62, n. 4, p. 2475-2485, 2000

Woodbury 2000

Acesso online

2
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 63, n. 8, p. 5204/1-5204/5, 2001

Woodbury 2001

Acesso online

3
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
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Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers

L. K. Teles (Lara Kühl) L G Ferreira; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physical Review B v. 69, n. 24, p. 245317/1-245317/10, 2004

Woodbury 2004

Acesso online

4
Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems
Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems
Material Type:
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Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems

M Marques L. K Teles (Lara Kühl); L G Ferreira; L M R Scolfaro

Physical Review B v. 73, n. 23, p. 235205, 2006

Woodbury 2006

Acesso online

5
General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures the case of the NV − center in diamond
General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures the case of the NV − center in diamond
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General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures the case of the NV − center in diamond

Bruno Lucatto Ronaldo Rodrigues Pela; Marcelo Marques; Lara K Teles; L. V. C Assali (Lucy Vitória Credidio)

PHYSICAL REVIEW B College, PK. v. 96, n. 7, p. 075145, ago. 2017

College, PK. 2017

Item não circula. Consulte sua biblioteca.(Acessar)

6
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys
First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys
Material Type:
Artigo 		Adicionar ao Meu Espaço

First-principles calculations of the thermodynamic and structural properties of strained 'In IND.X''Ga IND.1-X'N and 'Al IND.X''Ga IND.1-X' N alloys

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 62, n. 4, p. 2475-2485, 2000

Woodbury 2000

Acesso online

7
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N

L. K. Teles (Lara Kühl) J Furthmuller; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); F Bechstedt

Physical Review B Woodbury v. 63, n. 8, p. 5204/1-5204/5, 2001

Woodbury 2001

Acesso online

8
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers
Material Type:
Artigo 		Adicionar ao Meu Espaço

Theoretical study of strain-induced ordering in cubic 'In IND.X' 'Ga IND.1-X' N epitaxial layers

L. K. Teles (Lara Kühl) L G Ferreira; Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto)

Physical Review B v. 69, n. 24, p. 245317/1-245317/10, 2004

Woodbury 2004

Acesso online

9
Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems
Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems
Material Type:
Artigo 		Adicionar ao Meu Espaço

Statistical model applied to "A IND.X" "B IND.Y" "C IND.1-X-Y" D quaternary alloys bond lengths and energy gaps of "Al IND.X" "Ga IND.Y" "In IND.1-X-Y" X (X=As, P, or N) systems

M Marques L. K Teles (Lara Kühl); L G Ferreira; L M R Scolfaro

Physical Review B v. 73, n. 23, p. 235205, 2006

Woodbury 2006

Acesso online

10
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
Material Type:
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Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos (Luis Eugênio) L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J L P Castineira; A L Rosa; J. R Leite (José Roberto)

Physical Review B Woodbury v. 63, n. 16, p. 5210/1-5210/10, 2001

Woodbury 2001

Acesso online

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Deste Autor:

  1. Teles, L
  2. Scolfaro, L
  3. Leite, J
  4. Ferreira, L
  5. Bechstedt, F

Neste Assunto:

  1. Estrutura Eletrônica
  2. Matéria Condensada
  3. Semicondutores
  4. Mathematical Analysis
  5. Physics, Applied

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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