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1
Dislocation core reconstruction in zinc-blende semiconductors
Dislocation core reconstruction in zinc-blende semiconductors
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Dislocation core reconstruction in zinc-blende semiconductors

João Francisco Justo Filho 1966- Adalberto Fazzio; Alex Antonelli

Journal of Physics-Condensed Matter Bristol v. 12, n. 49, p. 10039-10044, 2000

Bristol 2000

Acesso online

2
Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon
Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon
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Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon

Alex Antonelli João Francisco Justo Filho 1966-; Adalberto Fazzio

Journal of Physics-Condensed Matter Bristol v. 14, n. 48, p. 12761-12765, 2002

Bristol 2002

Acesso online

3
Theoretical investigation of Hf and Zr defects in c-Ge
Theoretical investigation of Hf and Zr defects in c-Ge
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Theoretical investigation of Hf and Zr defects in c-Ge

Wanderla Luis Scopel Adalberto Fazzio; Antonio Jose Roque da Silva

Journal of Physics-Condensed Matter v. 21, n. 1, p. 012206/1-012206/3, 2009

Bristol 2009

Acesso online

4
Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon
Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon
Material Type:
Artigo 		Adicionar ao Meu Espaço

Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon

Alex Antonelli João Francisco Justo Filho 1966-; Adalberto Fazzio

Journal of Physics-Condensed Matter Bristol v. 14, n. 48, p. 12761-12765, 2002

Bristol 2002

Acesso online

5
Theoretical investigation of Hf and Zr defects in c-Ge
Theoretical investigation of Hf and Zr defects in c-Ge
Material Type:
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Theoretical investigation of Hf and Zr defects in c-Ge

Wanderla Luis Scopel Adalberto Fazzio; Antonio Jose Roque da Silva

Journal of Physics-Condensed Matter v. 21, n. 1, p. 012206/1-012206/3, 2009

Bristol 2009

Acesso online

6
Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
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Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator

Tome M. Schmidt R. H Miwa; Adalberto Fazzio

JOURNAL OF PHYSICS-CONDENSED MATTER Bristol v. 25, n. 44, p. 445003, nov. 2013

Bristol 2013

Acesso online

7
Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator
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Carrier-mediated magnetism in transition metal doped 'BI' IND. 2''SE' IND. 3' topological insulator

Tome M. Schmidt R. H Miwa; Adalberto Fazzio

JOURNAL OF PHYSICS-CONDENSED MATTER Bristol v. 25, n. 44, p. 445003, nov. 2013

Bristol 2013

Acesso online

8
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
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The effect of a stacking fault on the electronic properties of dopants in gallium arsenide

T M Schmidt João Francisco Justo Filho 1966-; Adalberto Fazzio

Journal of Physics-Condensed Matter Bristol v. 12, n. 49, p. 10235-10239, 2000

Bristol 2000

Acesso online

9
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
Material Type:
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The effect of a stacking fault on the electronic properties of dopants in gallium arsenide

T M Schmidt João Francisco Justo Filho 1966-; Adalberto Fazzio

Journal of Physics-Condensed Matter Bristol v. 12, n. 49, p. 10235-10239, 2000

Bristol 2000

Acesso online

10
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
The effect of a stacking fault on the electronic properties of dopants in gallium arsenide
Material Type:
Artigo 		Adicionar ao Meu Espaço

The effect of a stacking fault on the electronic properties of dopants in gallium arsenide

T M Schmidt João Francisco Justo Filho 1966-; Adalberto Fazzio

Journal of Physics-Condensed Matter Bristol v. 12, n. 49, p. 10235-10239, 2000

Bristol 2000

Acesso online

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Deste Autor:

  1. Fazzio, A
  2. Schmidt, T
  3. Justo Filho, J
  4. Miwa, R
  5. Antonelli, A

Neste Assunto:

  1. Semicondutores
  2. Matéria Condensada
  3. Magnetismo
  4. Espectroscopia
  5. Topologia

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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