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Remeasurement of characteristic X-ray emission lines and their application to line profile analysis and lattice parameter determination
Remeasurement of characteristic X-ray emission lines and their application to line profile analysis and lattice parameter determination
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Remeasurement of characteristic X-ray emission lines and their application to line profile analysis and lattice parameter determination

Härtwig, J. ; Hölzer, G. ; Förster, E. ; Goetz, K. ; Wokulska, K. ; Wolf, J.

Physica status solidi. A, Applied research, 1994-05, Vol.143 (1), p.23-34

Berlin: WILEY-VCH Verlag

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2
New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers
New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers
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New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in-situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers

Hull, R. ; Bean, J. C.

Physica status solidi. A, Applied research, 1993-08, Vol.138 (2), p.533-546

Berlin: WILEY-VCH Verlag

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3
On the use of low energy misfit dislocation structures to filter threading dislocations in epitaxial heterostructures
On the use of low energy misfit dislocation structures to filter threading dislocations in epitaxial heterostructures
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On the use of low energy misfit dislocation structures to filter threading dislocations in epitaxial heterostructures

Simpson, C. Hu ; Jesser, W. A.

Physica status solidi. A, Applied research, 1995-05, Vol.149 (1), p.9-20

Berlin: WILEY-VCH Verlag

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4
Interdiffusion behavior in GaAs/AlAs superlattices after thermal annealing
Interdiffusion behavior in GaAs/AlAs superlattices after thermal annealing
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Interdiffusion behavior in GaAs/AlAs superlattices after thermal annealing

Kim, S. K. ; Kang, T. W. ; Oh, Y. T. ; Hong, C. Y. ; Kim, T. W.

Physica status solidi. A, Applied research, 1994-06, Vol.143 (2), p.K91-K95

Berlin: WILEY-VCH Verlag

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5
Electron microscopy and mass-spectrometry study of InGaAsP/InP heterostructures (pin diodes) grown by liquid phase epitaxy
Electron microscopy and mass-spectrometry study of InGaAsP/InP heterostructures (pin diodes) grown by liquid phase epitaxy
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Electron microscopy and mass-spectrometry study of InGaAsP/InP heterostructures (pin diodes) grown by liquid phase epitaxy

Volkov, V. V. ; Luyten, W. ; Van Landuyt, J. ; Férauge, C. ; Oksenoid, K. G. ; Gijbels, R. ; Vasilev, M. G. ; Shelyakin, A. A. ; Lazarev, V. B.

Physica status solidi. A, Applied research, 1993-11, Vol.140 (1), p.73-85

Berlin: WILEY-VCH Verlag

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6
Growth of dendritic zinc oxide crystals by rapid condensation of high-temperature ultrasuper-saturated gas
Growth of dendritic zinc oxide crystals by rapid condensation of high-temperature ultrasuper-saturated gas
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Growth of dendritic zinc oxide crystals by rapid condensation of high-temperature ultrasuper-saturated gas

YAMADA, K

Die Naturwissenschaften, 1994-02, Vol.81 (2), p.85-86

Heidelberg: Springer

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7
Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures
Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures
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Misfit dislocations in modulation-doped In0.2Ga0.8As/GaAs strained multilayer structures

Wang, J. ; Steeds, J. W. ; Westwood, D. I.

Physica status solidi. A, Applied research, 1993-08, Vol.138 (2), p.431-435

Berlin: WILEY-VCH Verlag

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8
Thermoelastic stresses in HgxCd1−xTe-SiO2-in structures under heat treatments
Thermoelastic stresses in HgxCd1−xTe-SiO2-in structures under heat treatments
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Thermoelastic stresses in HgxCd1−xTe-SiO2-in structures under heat treatments

Aleksandrov, L. N. ; Balandin, V. Yu ; Dvurechenskii, A. V. ; Kulyasova, O. A.

Physica status solidi. A, Applied research, 1992-05, Vol.131 (1), p.K19-K24

Berlin: WILEY-VCH Verlag

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9
Detection of the active layer of AIIIBV semiconductor quantum-well structures by high resolution X-ray diffractometry
Detection of the active layer of AIIIBV semiconductor quantum-well structures by high resolution X-ray diffractometry
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Detection of the active layer of AIIIBV semiconductor quantum-well structures by high resolution X-ray diffractometry

Baumbach, G. T. ; Rhan, H. ; Pietsch, U.

Physica status solidi. A, Applied research, 1988-09, Vol.109 (1), p.K7-K10

Berlin: WILEY-VCH Verlag

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10
On the Possibility of Beam Deflection at Charged Particle Channeling in Superlattices with Gradually Varying Composition
On the Possibility of Beam Deflection at Charged Particle Channeling in Superlattices with Gradually Varying Composition
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On the Possibility of Beam Deflection at Charged Particle Channeling in Superlattices with Gradually Varying Composition

Rudko, V. N.

Physica status solidi. A, Applied research, 1991-03, Vol.124 (1), p.K7-K9

Berlin: WILEY-VCH Verlag

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