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1
Numerical calculations of the effects of structural imperfections on mos capacitors
Numerical calculations of the effects of structural imperfections on mos capacitors
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Numerical calculations of the effects of structural imperfections on mos capacitors

M C V Lopes Claus Martin Hasenack; V Baranauskas

Pennington v.141, n.6 , p.1621-8, jun. 1994 Journal of the Electrochemical Society

Pennington 1994

Item não circula. Consulte sua biblioteca.(Acessar)

2
Numerical calculations of the effects of structural imperfections on mos capacitors
Numerical calculations of the effects of structural imperfections on mos capacitors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Numerical calculations of the effects of structural imperfections on mos capacitors

M C V Lopes Claus Martin Hasenack; V Baranauskas

Pennington v.141, n.6 , p.1621-8, jun. 1994 Journal of the Electrochemical Society

Pennington 1994

Item não circula. Consulte sua biblioteca.(Acessar)

3
A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
Material Type:
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A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps

Sebastião Gomes dos Santos Filho 1962- Claus Martin Hasenack; L C Salay; P W Mertens

Pennington v.142, n.3 , p.902-7, mar. 1995 Journal of the Electrochemical Society

Pennington 1995

Item não circula. Consulte sua biblioteca.(Acessar)

4
'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness
'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness
Material Type:
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'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness

M C V Lopes Sebastião Gomes dos Santos Filho 1962-; Claus Martin Hasenack; V Baranauskas

Pennington v.143, n.3 , p.1021-5, mar. 1996 Journal of the Electrochemical Society

Pennington 1996

Item não circula. Consulte sua biblioteca.(Acessar)

5
A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps
Material Type:
Artigo 		Adicionar ao Meu Espaço

A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps

Sebastião Gomes dos Santos Filho 1962- Claus Martin Hasenack; L C Salay; P W Mertens

Pennington v.142, n.3 , p.902-7, mar. 1995 Journal of the Electrochemical Society

Pennington 1995

Item não circula. Consulte sua biblioteca.(Acessar)

6
'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness
'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness
Material Type:
Artigo 		Adicionar ao Meu Espaço

'SI'-'SI''O IND.2' electronic interface roughness as a consequence of 'SI'-'SI''O IND.2' topographic interface roughness

M C V Lopes Sebastião Gomes dos Santos Filho 1962-; Claus Martin Hasenack; V Baranauskas

Pennington v.143, n.3 , p.1021-5, mar. 1996 Journal of the Electrochemical Society

Pennington 1996

Item não circula. Consulte sua biblioteca.(Acessar)

7
Effect of Competing Oxidizing Reactions and Transport Limitation on the Faradaic Efficiency in Plasma Electrolysis
Effect of Competing Oxidizing Reactions and Transport Limitation on the Faradaic Efficiency in Plasma Electrolysis
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Effect of Competing Oxidizing Reactions and Transport Limitation on the Faradaic Efficiency in Plasma Electrolysis

Delgado, Hernan E. ; Radomsky, Rebecca C. ; Martin, Daniel C. ; Bartels, David M. ; Rumbach, Paul ; Go, David B.

Journal of the Electrochemical Society, 2019, Vol.166 (6), p.E181-E186 [Periódico revisado por pares]

United States: The Electrochemical Society

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8
Rate capabilities of nanostructured LiMn2O4 electrodes in aqueous electrolyte
Rate capabilities of nanostructured LiMn2O4 electrodes in aqueous electrolyte
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Rate capabilities of nanostructured LiMn2O4 electrodes in aqueous electrolyte

NAICHAO LI ; PATRISSI, C. J ; GUANGLI CHE ; MARTIN, C. R WCA

Journal of the Electrochemical Society, 2000-06, Vol.147 (6), p.2044-2049 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

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9
In situ studies of imidazole and its derivatives as copper corrosion inhibitors : I. Activation energies and thermodynamics of adsorption
In situ studies of imidazole and its derivatives as copper corrosion inhibitors : I. Activation energies and thermodynamics of adsorption
Material Type:
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In situ studies of imidazole and its derivatives as copper corrosion inhibitors : I. Activation energies and thermodynamics of adsorption

GASPARAC, R ; MARTIN, C. R ; STUPNISEK-LISAC, E

Journal of the Electrochemical Society, 2000-02, Vol.147 (2), p.548-551 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

Texto completo disponível

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10
A high-rate, high-capacity, nanostructured Sn-based anode prepared using sol-gel template synthesis
A high-rate, high-capacity, nanostructured Sn-based anode prepared using sol-gel template synthesis
Material Type:
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A high-rate, high-capacity, nanostructured Sn-based anode prepared using sol-gel template synthesis

NAICHAO LI ; MARTIN, Charles R WCA

Journal of the Electrochemical Society, 2001, Vol.148 (2), p.A164-A170 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

Texto completo disponível

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