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Material Type: Artigo
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Selective area growth of InxGa1−xAs nanowires on HfO2 templates for highly scaled nMOS devicesTejedor, Paloma ; Benedicto, MarcosMRS Advances, 2019, Vol.4 (5-6), p.337-342 [Periódico revisado por pares]Cham: Springer International PublishingTexto completo disponível |