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1
Growth of selg-organized InGaAs islands by molecular beam epitaxy
Growth of selg-organized InGaAs islands by molecular beam epitaxy
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Growth of selg-organized InGaAs islands by molecular beam epitaxy

A. A. Quivy (Alain André) M A Cotta; J. R Leite (José Roberto); Brazilian Workshop on Semiconductor Physics (8. 1997 Águas de Lindóia, SP)

Brazilian Journal of Physics São Paulo v. 27, n. 4, p. 154-457, 1998

São Paulo Sociedade Brasileira de Física 1998

Item não circula. Consulte sua biblioteca.(Acessar)

2
p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
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p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates

A. A. Quivy (Alain André) M Frizzarini; E C F Silva; A L Sperandio; J. R Leite (José Roberto); Brazilian Workshop on Semiconductor Physics (8. 1997 Águas de Lindóia, SP)

Brazilian Journal of Physics São Paulo v. 27A, n. 4, p. 125-129, 1998

São Paulo Sociedade Brasileira de Física 1998

Item não circula. Consulte sua biblioteca.(Acessar)

3
Response testing of Schottky-barrier GaAs detectors with alpha particles
Response testing of Schottky-barrier GaAs detectors with alpha particles
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Response testing of Schottky-barrier GaAs detectors with alpha particles

M S Pereira Vitor Ângelo Paulino de Aguiar; Saulo Gabriel Pereira Nascimento Alberton; Alain André Quivy; Brazilian Workshop on Nuclear Physics 44th 2021 Online

Journal of Physics: Conference Series Bristol v. 2340, 012050, 2022

Bristol IOP Publishing 2022

Item não circula. Consulte sua biblioteca.(Acessar)

4
Modeling noise in superlattice quantum-well infrared photodetectors
Modeling noise in superlattice quantum-well infrared photodetectors
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Modeling noise in superlattice quantum-well infrared photodetectors

Fernando Massa Fernandes Marcel Santos Claro; Euzi Conceição Fernandes da Silva; Alain Andre Quivy

JOURNAL OF PHYSICS D: APPLIED PHYSICS Bristol v. 47, n. 38, p. 385105, set. 2014

Bristol 2014

Acesso online

5
The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
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The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots

A D B Maia V M de Aquino; I F L Dias; E C F da Silva; A A Quivy; V Bindilatti

JOURNAL OF PHYSICS D: APPLIED PHYSICS London v.45, p. 225104, mai.2012

London 2012

Acesso online

6
Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
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Computation of dark current in QWIPs using a modelling based on ehrenfest theorem

D. M. Pedroso A Passaro; L. C. O Dacal; G. S Vieira; Euzi Conceição Fernandes da Silva; Alain Andre Quivy

JOURNAL OF PHYSICS D: APPLIED PHYSICS Bristol v. 48, n. 36, p. 365102, sep. 2015

Bristol 2015

Acesso online

7
Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
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Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots

R. Y. Tanaka N. M Abe; A Passaro; Euzi Conceicao Fernandes da Silva; Alain Andre Quivy

Journal of Physics D: Applied Physics Bristol v. 49, n. 21, p. 215101, jun. 2016

Bristol 2016

Item não circula. Consulte sua biblioteca.(Acessar)

8
The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
Material Type:
Artigo 		Adicionar ao Meu Espaço

The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots

A D B Maia V M de Aquino; I F L Dias; E C F da Silva; A A Quivy; V Bindilatti

JOURNAL OF PHYSICS D: APPLIED PHYSICS London v.45, p. 225104, mai.2012

London 2012

Acesso online

9
New method for studying semiconducting surfaces in air by scanning tunneling microscopy
New method for studying semiconducting surfaces in air by scanning tunneling microscopy
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New method for studying semiconducting surfaces in air by scanning tunneling microscopy

A S Ferlauto A. A Quivy (Alain André)

Modern Physics Letters B v. 10, n. 24, p. 1189-1195, 1997

1997

Item não circula. Consulte sua biblioteca.(Acessar)

10
In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
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Artigo 		Adicionar ao Meu Espaço

In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy

S Martini A. A Quivy (Alain André)

Brazilian Journal of Physics São Paulo v. 32, n. 2A, p. 359-361, 2002

São Paulo 2002

Acesso online

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Deste Autor:

  1. Quivy, A
  2. Lamas, T
  3. Silva, E
  4. Leite, J
  5. Silva, M

Neste Assunto:

  1. Semicondutores
  2. Matéria Condensada
  3. Poços Quânticos
  4. Estrutura Eletrônica
  5. Fotoluminescência

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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