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1
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

A Tabata J B B Oliveira; C A F Pintão; Euzi Conceição Fernandes da Silva; Tomas Eriksson Lamas; C A Duarte; Guennadii Michailovich Gusev; Brazilian Workshop on Semiconductor Physics Juiz de Fora, Minas Gerais 2011 (15th

Physics Procedia: Book Series Amsterdam v.28, p. 53-56, 2012

Amsterdam 2012

Acesso online

2
Resonant Raman excitation of Mn vibrational modes and photoluminescence spectra of 'Ga IND. 1-x''Mn IND.x'N films prepared by reactive sputtering
Resonant Raman excitation of Mn vibrational modes and photoluminescence spectra of 'Ga IND. 1-x''Mn IND.x'N films prepared by reactive sputtering
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Resonant Raman excitation of Mn vibrational modes and photoluminescence spectra of 'Ga IND. 1-x''Mn IND.x'N films prepared by reactive sputtering

J. Humberto D. Silva Antonio Ricardo Zanatta; Douglas M. G Leite; Américo S Tabata; J. Brás B Oliveira; Paulo N Lisboa Filho; J Varalda; W. A Ortiz; International School and Conference on Spintronics and Quantum Information Technology (5. 2009 Cracow)

Programm Warsaw : Institute of Physics, Polish Academy of Sciences, 2009

Warsaw Institute of Physics, Polish Academy of Siences 2009

Localização: IFSC - Inst. Física de São Carlos    (PROD016094 ) e outros locais(Acessar)

3
Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering
Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering
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Evidence of phase separation in cubic 'In IND.X''Ga IND.1-X' N epitaxial layers by resonant Raman scattering

E. Silveira A Tabata; J. R Leite (José Roberto); R Trentin (Ricardo); V Lemos; T Frey; D. J As; D Schikora; K Lischka

Applied Physics Letters Woodbury v. 75, n. 23, p. 3602-3604, 1999

Woodbury 1999

Item não circula. Consulte sua biblioteca.(Acessar)

4
Structural properties and Raman modes of zinc blende InN epitaxial layers
Structural properties and Raman modes of zinc blende InN epitaxial layers
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Structural properties and Raman modes of zinc blende InN epitaxial layers

A. Tabata A. P Lima; L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); V Lemos; B Schoettker; T Frey; D Schikova; K Lischka

Applied Physics Letters Woodbury v. 74, n. 3, p. 362-364, 1999

Woodbury 1999

Item não circula. Consulte sua biblioteca.(Acessar)

5
Raman phonon modes of zinc blende 'In IND. X''Ga IND. 1-X' N alloy epitaxial layers
Raman phonon modes of zinc blende 'In IND. X''Ga IND. 1-X' N alloy epitaxial layers
Material Type:
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Raman phonon modes of zinc blende 'In IND. X''Ga IND. 1-X' N alloy epitaxial layers

A. Tabata J. R Leite (José Roberto); A. P Lima; E Silveira; T Frey; D. J As; D Schikora; K Lischka

Applied Physics Letters Woodbury v. 75, n. 8, p. 1095-1097, 1999

Woodbury 1999

Item não circula. Consulte sua biblioteca.(Acessar)

6
Comparative raman studies of cubic and hexagonal gan epitaxial layers
Comparative raman studies of cubic and hexagonal gan epitaxial layers
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Comparative raman studies of cubic and hexagonal gan epitaxial layers

A Tabata R Enderlein; J. R Leite (José Roberto); S W Silva; J C Galzerani; D Schikora; M Kloidt; K Lischka

New York v.79, n.8 , p.4137-9, 1996 Journal of Applied Physics

New York 1996

Item não circula. Consulte sua biblioteca.(Acessar)

7
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
Material Type:
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Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Applied Physics Woodbury v. 90, n. 5, p. 2280-2289, 2001

Woodbury 2001

Acesso online

8
Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure
Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure
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Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructure

O Husberg A Khartchenko; D J As; H Vogelsang; T Frey; D Schikora; O C Noriega; A Tabata; J. R Leite (José Roberto)

Applied Physics Letters Woodbury v. 79, n. 9, p. 1243-1245, 2001

Woodbury 2001

Acesso online

9
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures
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Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures

T Frey D J As; M Bartels; A Pawlis; A Tabata; J R L Fernandez; M T O Silva; J. R Leite (José Roberto); C Haug; R Brenn

Journal of Applied Physics Woodbury v. 89, n. 5, p. 2631-2634, 2001

Woodbury 2001

Acesso online

10
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
Material Type:
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Phase separation suppression in InGaN epitaxial layers due to biaxial strain

A Tabata L. K Teles (Lara Kühl); Luisa Maria Ribeiro Scolfaro; J. R Leite (José Roberto); A Kharchenko; T Frey; D J As; D Schikora; K Lischka; J Furthmüller; F Bechstedt

Applied Physics Letters New York v. 80, n. 5, p. 769-771, 2002

New York 2002

Acesso online

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Deste Autor:

  1. Tabata, A
  2. Leite, J
  3. Frey, T
  4. As, D
  5. Lischka, K

Neste Assunto:

  1. Fotoluminescência
  2. Semicondutores
  3. Física
  4. Matéria Condensada
  5. Estrutura Eletrônica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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