Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Native point defects and dangling bonds in α-Al2O3Choi, Minseok ; Janotti, Anderson ; Van de Walle, Chris G.Journal of applied physics, 2013-01, Vol.113 (4) [Periódico revisado por pares]Texto completo disponível |
2 |
Material Type: Artigo
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Thermal conductivity of bulk and nanowire InAs, AlN, and BeO polymorphs from first principlesLi, Wu ; Mingo, NatalioJournal of applied physics, 2013-11, Vol.114 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Phase diagram and magnetocaloric effects in aluminum doped MnNiGe alloysQuetz, Abdiel ; Samanta, Tapas ; Dubenko, Igor ; Kangas, Michael J. ; Chan, Julia Y. ; Stadler, Shane ; Ali, NaushadJournal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]Texto completo disponível |
4 |
Material Type: Artigo
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Interdiffusion of Ni-Al multilayers: A continuum and molecular dynamics studyXu, Rong-Guang ; Falk, Michael L. ; Weihs, Timothy P.Journal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]Texto completo disponível |
5 |
Material Type: Artigo
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Investigation of optical limiting properties of Aluminium nanoparticles prepared by pulsed laser ablation in different carrier mediaKuladeep, Rajamudili ; Jyothi, L. ; Prakash, P. ; Mayank Shekhar, S. ; Durga Prasad, M. ; Narayana Rao, D.Journal of applied physics, 2013-12, Vol.114 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Experimental study on impact-initiated characters of multifunctional energetic structural materialsZhang, X. F. ; Shi, A. S. ; Qiao, L. ; Zhang, J. ; Zhang, Y. G. ; Guan, Z. W.Journal of applied physics, 2013-02, Vol.113 (8) [Periódico revisado por pares]Texto completo disponível |
7 |
Material Type: Artigo
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Self-propagating reactions in Al/Zr multilayers: Anomalous dependence of reaction velocity on bilayer thicknessBarron, S. C. ; Kelly, S. T. ; Kirchhoff, J. ; Knepper, R. ; Fisher, K. ; Livi, K. J. T. ; Dufresne, E. M. ; Fezzaa, K. ; Barbee, T. W. ; Hufnagel, T. C. ; Weihs, T. P.Journal of applied physics, 2013-12, Vol.114 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistorsChoi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, SamuelJournal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
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Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interfaceDingemans, G. ; Einsele, F. ; Beyer, W. ; van de Sanden, M. C. M. ; Kessels, W. M. M.Journal of applied physics, 2012-05, Vol.111 (9) [Periódico revisado por pares]Texto completo disponível |
10 |
Material Type: Artigo
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Elastic constants and critical thicknesses of ScGaN and ScAlNZhang, S. ; Fu, W. Y. ; Holec, D. ; Humphreys, C. J. ; Moram, M. A.Journal of applied physics, 2013-12, Vol.114 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |