Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticlesGautam, Madhav ; Jayatissa, Ahalapitiya H.Solid-state electronics, 2012-12, Vol.78, p.159-165 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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A review on fabrication, sensing mechanisms and performance of metal oxide gas sensorsGardon, M. ; Guilemany, J. M.Journal of materials science. Materials in electronics, 2013-05, Vol.24 (5), p.1410-1421 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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3 |
Material Type: Artigo
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Effects of annealing on thermoelectric properties of Sb2Te3 thin films prepared by radio frequency magnetron sputteringFang, Bo ; Zeng, Zhigang ; Yan, Xiaoxia ; Hu, ZhiyuJournal of materials science. Materials in electronics, 2013-04, Vol.24 (4), p.1105-1111 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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4 |
Material Type: Artigo
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Graphene based field effect transistors: Efforts made towards flexible electronicsSharma, Bhupendra K. ; Ahn, Jong-HyunSolid-state electronics, 2013-11, Vol.89, p.177-188 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Junctionless Nanowire Transistor (JNT): Properties and design guidelinesColinge, J.P. ; Kranti, A. ; Yan, R. ; Lee, C.W. ; Ferain, I. ; Yu, R. ; Dehdashti Akhavan, N. ; Razavi, P.Solid-state electronics, 2011-11, Vol.65-66, p.33-37 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regimeJazaeri, F. ; Barbut, L. ; Koukab, A. ; Sallese, J.-M.Solid-state electronics, 2013-04, Vol.82, p.103-110 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETsVandooren, A. ; Leonelli, D. ; Rooyackers, R. ; Hikavyy, A. ; Devriendt, K. ; Demand, M. ; Loo, R. ; Groeseneken, G. ; Huyghebaert, C.Solid-state electronics, 2013-05, Vol.83, p.50-55 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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8 |
Material Type: Artigo
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Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanismBhowmik, B. ; Dutta, K. ; Hazra, A. ; Bhattacharyya, P.Solid-state electronics, 2014-09, Vol.99, p.84-92 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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Covellite CuS – Single crystal growth by chemical vapour transport (CVT) technique and characterizationChaki, S.H. ; Tailor, J.P. ; Deshpande, M.P.Materials science in semiconductor processing, 2014-11, Vol.27, p.577-585 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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10 |
Material Type: Artigo
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Preparation of transparent ZnO thin films and their application in UV sensor devicesPanda, S.K. ; Jacob, C.Solid-state electronics, 2012-07, Vol.73, p.44-50 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |