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Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film
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Nanometer-scale lithography on the oligosilane Langmuir-Blodgett film

MARUYAMA, H ; KOSAI, N ; SATO, T ; SAGISAKA, S ; SEGAWA, H ; SHIMIDZU, T ; TANAKA, K

Japanese Journal of Applied Physics, 1997, Vol.36 (12A), p.7312-7316 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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2
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
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Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers

Kikuchi, K. ; Goto, M. ; Nakagawa, H. ; Segawa, S. ; Tokoro, K. ; Taino, T. ; Myoren, H. ; Takada, S. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.94-97 [Periódico revisado por pares]

New York, NY: IEEE

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3
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
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New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits

Kikuchi, K. ; Segawa, S. ; Eun-Sil Jung ; Nakagawa, H. ; Tokoro, K. ; Itatani, H. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.119-122 [Periódico revisado por pares]

New York, NY: IEEE

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4
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
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Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Aoyagi, Masahiro ; Segawa, Shigemasa ; Jung, EunSil ; Itatani, Taro ; Komuro, Masanori ; Sakamoto, Tsuenenori ; Itatani, Hiroshi ; Miyamura, Masataka ; Matsumoto, Shunichi

SPIE proceedings series, 2001, Vol.4345, p.1073-1078

Bellingham WA: SPIE

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5
Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
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Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques

Sun, Handong ; Makino, Takayuki ; Nguyen, Tien T ; Segawa, Yusaburo ; Tang, ZiKang ; Wong, George K ; Kawasaki, Masashi ; Ohtomo, Akira ; Tamura, Kentaro ; Koinuma, Hideomi

SPIE proceedings series, 2001, Vol.4281, p.68-76

Bellingham WA: SPIE

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6
Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
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Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy

Makino, Takayuki ; Sun, Handong ; Nguyen, Tien T ; Segawa, Yusaburo ; Chia, Chinhau ; Kawasaki, Masashi ; Ohtomo, Akira ; Tamura, Kentaro ; Koinuma, Hideomi

SPIE proceedings series, 2001, Vol.4281, p.59-67

Bellingham WA: SPIE

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7
Performance of a chemically amplified positive resist for next-generation photomask fabrication
Performance of a chemically amplified positive resist for next-generation photomask fabrication
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Performance of a chemically amplified positive resist for next-generation photomask fabrication

Kurihara, Masa-aki ; Segawa, Toshikazu ; Okuno, Daichi ; Hayashi, Naoya ; Sano, Hisatake

SPIE proceedings series, 1998, Vol.3412, p.279-291

Bellingham WA: SPIE

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8
Performance of positive tone chemically amplified resists for next generation photomask fabrication
Performance of positive tone chemically amplified resists for next generation photomask fabrication
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Performance of positive tone chemically amplified resists for next generation photomask fabrication

SEGAWA, T ; KURIHARA, M.-A ; SASAKI, S ; INOMATA, H ; HAYASHI, N ; SANO, H

SPIE proceedings series, 1998, p.82-93

Bellingham WA: SPIE

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9
Fragile porous low-k/copper integration by using electro-chemical polishing
Fragile porous low-k/copper integration by using electro-chemical polishing
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Fragile porous low-k/copper integration by using electro-chemical polishing

Takahashi, S. ; Tai, K. ; Ohtorii, H. ; Komai, N. ; Segawa, Y. ; Horikoshi, H. ; Yasuda, Z. ; Yamada, H. ; Ishihara, M. ; Nogami, T.

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.32-33

Piscataway NJ: IEEE

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