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Refinado por: Base de dados/Biblioteca: Aerospace Database remover Nome da Publicação: Ieee Transactions On Electron Devices remover
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Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance
Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance
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Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

Salem, A.F. ; Smith, A.W. ; Brennan, K.F.

IEEE transactions on electron devices, 1994-07, Vol.41 (7), p.1112-1119 [Periódico revisado por pares]

Headquarters: IEEE

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2
Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon
Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon
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Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

del Alamo, J.A. ; Swanson, R.M.

IEEE transactions on electron devices, 1987-07, Vol.34 (7), p.1580-1589 [Periódico revisado por pares]

Legacy CDMS: IEEE

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3
Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface
Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface
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Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

Neugroschel, A. ; Arienzo, M. ; Komem, Y. ; Isaac, R.D.

IEEE transactions on electron devices, 1985-04, Vol.32 (4), p.807-816 [Periódico revisado por pares]

Legacy CDMS: IEEE

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4
Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects
Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects
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Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Radzimski, Z. ; Honeycutt, J. ; Rozgonyi, G.A.

IEEE transactions on electron devices, 1988-01, Vol.35 (1), p.80-84 [Periódico revisado por pares]

Legacy CDMS: IEEE

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5
Formation of planar n+pockets in GaAs for mixer diode fabrication
Formation of planar n+pockets in GaAs for mixer diode fabrication
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Formation of planar n+pockets in GaAs for mixer diode fabrication

Griffin, J.A. ; Spencer, M.G. ; Harris, G.L. ; Comas, J.

IEEE transactions on electron devices, 1984-08, Vol.31 (8), p.1096-1099 [Periódico revisado por pares]

Legacy CDMS: IEEE

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6
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
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Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J T ; Sandow, C ; Das, S ; Minamisawa, R A ; Mantl, S ; Appenzeller, J

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1822-1829 [Periódico revisado por pares]

New York, NY: IEEE

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7
Large-Area Diode Laser Defect Annealing of Polycrystalline Silicon Solar Cells
Large-Area Diode Laser Defect Annealing of Polycrystalline Silicon Solar Cells
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Large-Area Diode Laser Defect Annealing of Polycrystalline Silicon Solar Cells

Eggleston, B. ; Varlamov, S. ; Green, M.

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2838-2841 [Periódico revisado por pares]

New York, NY: IEEE

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8
Failure of moments-based transport models in nanoscale devices near equilibrium
Failure of moments-based transport models in nanoscale devices near equilibrium
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Failure of moments-based transport models in nanoscale devices near equilibrium

Jungemann, C. ; Grasser, T. ; Neinhuus, B. ; Meinerzhagen, B.

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2404-2408 [Periódico revisado por pares]

New York, NY: IEEE

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9
Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power Generation
Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power Generation
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Dynamic Analysis of Cascaded Laser Power Converters for Simultaneous High-Speed Data Detection and Optical-to-Electrical DC Power Generation

Jin-Wei Shi ; Kuo, F.-M ; Chan-Shan Yang ; Lo, S.-S ; Ci-Ling Pan

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2049-2056 [Periódico revisado por pares]

New York, NY: IEEE

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10
A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory Application
A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory Application
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A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory Application

Soon-Moon Jung ; Hoon Lim ; Kwak, K.H. ; Kinam Kim

IEEE transactions on electron devices, 2010-02, Vol.57 (2), p.474-481 [Periódico revisado por pares]

New York, NY: IEEE

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