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Material Type: Ata de Congresso
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N-type emitters passivation through antireflective phosphorus doped a-SiCxNy:H(n) stacksOrpella, A. ; Blanque, S. ; Roiati, V. ; Martin, I. ; Voz, C. ; Puigdollers, J. ; Alcubilla, R.2009 Spanish Conference on Electron Devices, 2009, p.357-359IEEETexto completo disponível |