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11
An Ultra-low Noise, Highly Compact Implantable 28 nm CMOS Neural Recording Amplifier
An Ultra-low Noise, Highly Compact Implantable 28 nm CMOS Neural Recording Amplifier
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An Ultra-low Noise, Highly Compact Implantable 28 nm CMOS Neural Recording Amplifier

Akuri, Naga-Ganesh ; Jatoth, Deepak-Naik ; Kumar, Sandeep ; Song, Hanjung ; Kar, Asutosh

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(3), 117, pp.270-283

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12
A 262 MHz Narrow Band RF Transceiver for Korean M-Bus Smart Metering Service
A 262 MHz Narrow Band RF Transceiver for Korean M-Bus Smart Metering Service
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A 262 MHz Narrow Band RF Transceiver for Korean M-Bus Smart Metering Service

Park, Dong-Wuk ; Byeon, Ki-Ryun ; Lee, Gi-Sung ; Lim, Tae-Hee ; Jo, Kyoung-Hwan ; Oh, Tae Hyoun ; Park, Hyung-Chul ; Eo, Yun-Seong

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(3), 117, pp.199-207

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13
Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application
Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application
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Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application

Seo, Yong-Jin

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(3), 117, pp.249-258

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14
2 Lanes × 2.65-6.4 Gb/s Scalable IO Transceiver with Delay Compensation Technique in 65 nm CMOS Process
2 Lanes × 2.65-6.4 Gb/s Scalable IO Transceiver with Delay Compensation Technique in 65 nm CMOS Process
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2 Lanes × 2.65-6.4 Gb/s Scalable IO Transceiver with Delay Compensation Technique in 65 nm CMOS Process

Chung, Goohyung ; Cho, Kyoungub ; Oh, Taehyoun

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2024, 24(3), 117, pp.184-190

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15
Structural, Dielectric, Electrical, Leakage Current Behavior of Calcined Compound; (Bi 1/2 Cs 1/2 )(Fe 1/3 Mn 1/3 W 1/3 )O 3 for Electronic Devices
Structural, Dielectric, Electrical, Leakage Current Behavior of Calcined Compound; (Bi 1/2 Cs 1/2 )(Fe 1/3 Mn 1/3 W 1/3 )O 3 for Electronic Devices
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Structural, Dielectric, Electrical, Leakage Current Behavior of Calcined Compound; (Bi 1/2 Cs 1/2 )(Fe 1/3 Mn 1/3 W 1/3 )O 3 for Electronic Devices

Sudhansu Sekhar Hota ; Debasish Panda ; Ram Naresh Prasad Choudhary

Transactions on Electrical and Electronic Materials, 2024, 25(3), , pp.280-293 [Periódico revisado por pares]

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16
Design of a W-band High-PAE Class A & AB Power Amplifi er in 150 nm GaAs Technology
Design of a W-band High-PAE Class A & AB Power Amplifi er in 150 nm GaAs Technology
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Design of a W-band High-PAE Class A & AB Power Amplifi er in 150 nm GaAs Technology

Jun Yan Lee ; Duo Wu ; Xuanrui Guo ; Mohammadmahdi Ariannejad ; Mohammad Arif Sobhan Bhuiyan ; Mahdi H. Miraz

Transactions on Electrical and Electronic Materials, 2024, 25(3), , pp.304-313 [Periódico revisado por pares]

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17
Density Functional Quantum Computations to Investigate the Physical Prospects of Lead-Free Chloro-Perovskites QAgCl 3 (Q = K, Rb) for Optoelectronic Applications
Density Functional Quantum Computations to Investigate the Physical Prospects of Lead-Free Chloro-Perovskites QAgCl 3 (Q = K, Rb) for Optoelectronic Applications
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Density Functional Quantum Computations to Investigate the Physical Prospects of Lead-Free Chloro-Perovskites QAgCl 3 (Q = K, Rb) for Optoelectronic Applications

Saeed Ullah ; Munawar Abbas ; Saad Tariq ; Khalid Mujasam Batoo ; Nasir Rahman ; Uzma Gul ; Mudasser Husain ; Sajjad Hussain ; Mohamed Musa Saad Hasb Elkhalig ; Muhammad Usman Ghani

Transactions on Electrical and Electronic Materials, 2024, 25(3), , pp.327-339 [Periódico revisado por pares]

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18
Study of Structural and Electrical Characterization of Doped and Undoped Cd 0.75 Se 0.25 Bulk Material for Solar Cell Application
Study of Structural and Electrical Characterization of Doped and Undoped Cd 0.75 Se 0.25 Bulk Material for Solar Cell Application
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Study of Structural and Electrical Characterization of Doped and Undoped Cd 0.75 Se 0.25 Bulk Material for Solar Cell Application

Deepak Kumar Singh ; Anupam Srivastava ; Sachin Singh ; D. K. Dwivedi

Transactions on Electrical and Electronic Materials, 2024, 25(3), , pp.356-364 [Periódico revisado por pares]

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19
Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties
Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties
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Investigation of Substitution of Nickel Cations in Cobalt Ferrite (CoFe2O4 ) Nanoparticles and Their Infl uence on Frequency and Temperature Dependent Dielectric and Magnetodielectric Properties

Biswajita Dash ; Krutika L. Routray ; Sunirmal Saha ; Satoru Yoshimura ; Soumyaranjan Ratha ; Manoj Ku Rout

Transactions on Electrical and Electronic Materials, 2024, 25(2), , pp.232-246 [Periódico revisado por pares]

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20
Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs
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Effect of Deposition Technique of SiN x Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs

Yağmur Güler ; Barış Onaylı ; Mehmet Taha Haliloğlu ; Doğan Yılmaz ; Tarık Asar ; Ekmel Özbay

Transactions on Electrical and Electronic Materials, 2024, 25(2), , pp.180-186 [Periódico revisado por pares]

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