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1 |
Material Type: Ata de Congresso
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Magnetic-field-induced Stoner transition in a quantum Hall ferromagnet at high filling factorsFriedland, K. ; Wasilewski, R. ; Toropov, A. ; Piot, Benjamin ; Maude, Duncan Kennedy ; Henini, M. ; Wasilewski, Z. ; Gupta, J. ; Friedland, J. ; Hey, R. ; Ploog, K. ; Gennser, U. ; Cavanna, A. ; Mailly, D. ; Airey, R. ; Hill, G.Physical review. B, Condensed matter and materials physics, 2007, Vol.75 (15) [Periódico revisado por pares]American Physical SocietyTexto completo disponível |
2 |
Material Type: Ata de Congresso
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Position-sensitive germanium detectors for gamma-ray imaging and spectroscopyAmman, Mark S ; Luke, Paul NSPIE 2000Texto completo disponível |
3 |
Material Type: Ata de Congresso
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Edge reclamation in position-sensitive photomultiplier tubesNakae, Les ; Ziock, KlausSPIE 1999Texto completo disponível |
4 |
Material Type: Ata de Congresso
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Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxyLubyshev, D.I. ; Cai, W.Z. ; Catchen, G.L. ; Mayer, T.S. ; Miller, D.L.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.125-130 [Periódico revisado por pares]IEEETexto completo disponível |
5 |
Material Type: Ata de Congresso
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NEMO: general release of a new comprehensive quantum device simulatorBlanks, D.K. ; Klimeck, G. ; Lake, R. ; Jovanovic, D. ; Bowen, R.C. ; Fernando, C. ; Frensley, W.R. ; Manhua LengCompound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.639-642 [Periódico revisado por pares]IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
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Energy gap bowing and refractive index spectrum of AlInN and AlGaInNPiprek, J. ; Peng, T. ; Qui, G. ; Olowolafe, J.O.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.227-230 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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PtTiPtAu and PdTiPtAu ohmic contacts to p-InGaAsYu, J.S. ; Kim, S.H. ; Kim, T.I.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.175-178 [Periódico revisado por pares]IEEETexto completo disponível |
8 |
Material Type: Ata de Congresso
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Modeling MBE RHEED signals using PCA and neural networksBrown, T. ; Lee, K. ; Dagnall, G. ; Kromann, R. ; Bicknell-Tassius, R. ; Brown, A. ; Dorsey, J. ; May, G.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.33-36 [Periódico revisado por pares]IEEETexto completo disponível |
9 |
Material Type: Ata de Congresso
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Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBPFujiwara, Y. ; Ito, T. ; Ofuchi, H. ; Tsuchiya, J. ; Tanigawa, A. ; Tabuchi, M. ; Takeda, Y.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.199-202 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Ata de Congresso
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Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dotsKamath, K. ; Jiang, H. ; Klotzkin, D. ; Phillips, J. ; Sosnowski, T. ; Norris, T. ; Singh, J. ; Bhattacharya, P.Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.525-529 [Periódico revisado por pares]IEEETexto completo disponível |