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1
Molecular cluster model of covalent semiconductor
Molecular cluster model of covalent semiconductor
Material Type:
Relatório Técnico 		Adicionar ao Meu Espaço

Molecular cluster model of covalent semiconductor

Adalberto Fazzio J. R Leite (José Roberto); Antonio Carlos Pavao; S L de Siqueira

São Paulo IFUSP 1977

Acesso online

2
Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam
Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam
Material Type:
Artigo 		Adicionar ao Meu Espaço

Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam

M. Martinelli S Bian; J. R Leite (José Roberto); Ricardo Josué Horowicz

Applied Physics Letters New York v. 72, n. 12, p. 1427-1429, 1998

New York 1998

Item não circula. Consulte sua biblioteca.(Acessar)

3
Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam
Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam
Material Type:
Artigo 		Adicionar ao Meu Espaço

Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam

M. Martinelli S Bian; J. R Leite (José Roberto); Ricardo Josué Horowicz

Applied Physics Letters New York v. 72, n. 12, p. 1427-1429, 1998

New York 1998

Item não circula. Consulte sua biblioteca.(Acessar)

4
Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image

F V de Sales S W da Silva; J M R Cruz; A F G Monte; M A G Soler; P C Morais; M J da Silva; A. A Quivy (Alain André); J. R Leite (José Roberto); International Meeting on Applied Physics (1. 2003 Badajoz)

Book of Abstracts Badajoz : APHYS, 2003

Badajoz APHYS 2003

Item não circula. Consulte sua biblioteca.(Acessar)

5
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures

Yuri A. Pusep M T O Silva; J C Galzerani; S C P Rodrigues; Luisa Maria Ribeiro Scolfaro; A. P Lima; A. A Quivy (Alain André); J. R Leite (José Roberto); N T Moshegov; P Basmaji

Journal of Applied Physics Woodbury v. 87, n. 4, p. 1825-1831, 2000

Woodbury 2000

Acesso online

6
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures

Yuri A. Pusep M T O Silva; J C Galzerani; S C P Rodrigues; Luisa Maria Ribeiro Scolfaro; A. P Lima; A. A Quivy (Alain André); J. R Leite (José Roberto); N T Moshegov; P Basmaji

Journal of Applied Physics Woodbury v. 87, n. 4, p. 1825-1831, 2000

Woodbury 2000

Acesso online

7
Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part II
Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part II
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part II

S. Watanabe (Shigueo) J. R Leite (José Roberto); Chinta M Sunta ed; Rolf Enderlein ed; Symposium on Defect Dependent Processes in Insulators and Seminconductors (1997 Campos do Jordão)

Symposium on Defect Dependent Processes in Insulators and Semiconductors, (Campos do Jordão : 1997) Radiation Effects and Defects in Solids London v. 147, n. 1-2, p. 1-132, 1998

London Gordon and Breach Science Publishers 1998

Item não circula. Consulte sua biblioteca.(Acessar)

8
Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part I
Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part I
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Symposium on defects dependent processes in insulators and semiconductors Proceedings. Part I

S. Watanabe (Shigueo) J. R Leite (José Roberto); Chinta M Sunta ed; Rolf Enderlein ed; Symposium on Defect Dependent Processes in Insulators and Seminconductors (1997 Campos do Jordão)

Symposium on Defect Dependent Processes in Insulators and Semiconductors, (Campos do Jordão : 1997) Radiation Effects and Defects in Solids London v. 146, n. 1-4, p. 1-356, 1998

London Gordon and Breach Science Publishers 1998

Item não circula. Consulte sua biblioteca.(Acessar)

9
Optical characterization of GaAs/AlAs multiple quantum wells interfaces
Optical characterization of GaAs/AlAs multiple quantum wells interfaces
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Optical characterization of GaAs/AlAs multiple quantum wells interfaces

V Lemos C. S Sérgio (Cássio Sanguini); A Pimenta Lima; A. A Quivy (Alain André); R Enderlein; J. R Leite (José Roberto); W Carvalho Junior; Symposium on Defect Dependent Processes in Insulators and Seminconductors (1997 Campos do Jordão)

Radiation Effects & Defects in Solids Symposium on Defect Dependent Processes in Insulators and Semiconductors (Campos do Jordão : 1997) London v. 146, p. 187-197, 1998

London Gordon & Breach 1998

Item não circula. Consulte sua biblioteca.(Acessar)

10
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
Material Type:
Artigo 		Adicionar ao Meu Espaço

Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates

S. Martini (Sandro) A. A Quivy (Alain André); A Tabata; J. R Leite (José Roberto)

Journal of Vacuum Science & Technology B New York v. 18, n. 4, p. 1991-1996, 2000

New York 2000

Acesso online

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Deste Autor:

  1. Leite, J
  2. Quivy, A
  3. Scolfaro, L
  4. Laureto, E
  5. Duarte, J

Neste Assunto:

  1. Estrutura Eletrônica
  2. Matéria Condensada
  3. Fotoluminescência
  4. Interface
  5. Semicondutores

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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