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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover
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Estimation of Gas Permeation Characteristics of Ultrahigh Barrier Edge Sealing Materials from Asymptotic Solution of Diffusion Equation
Estimation of Gas Permeation Characteristics of Ultrahigh Barrier Edge Sealing Materials from Asymptotic Solution of Diffusion Equation
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Estimation of Gas Permeation Characteristics of Ultrahigh Barrier Edge Sealing Materials from Asymptotic Solution of Diffusion Equation

Shimada, Toshihiro ; Yanase, Takashi ; Nagahama, Taro ; Kanno, Toshiyuki

Japanese Journal of Applied Physics, 2013-05, Vol.52 (5), p.05DA12-05DA12-3 [Periódico revisado por pares]

The Japan Society of Applied Physics

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2
Modeling of Feature Profile Evolution in SiO 2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma
Modeling of Feature Profile Evolution in SiO 2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma
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Modeling of Feature Profile Evolution in SiO 2 as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma

Shimada, Takashi ; Yagisawa, Takashi ; Makabe, Toshiaki

Japanese Journal of Applied Physics, 2006-11, Vol.45 (11R), p.8876 [Periódico revisado por pares]

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3
Self-Consistent Modeling of Feature Profile Evolution in Plasma Etching and Deposition
Self-Consistent Modeling of Feature Profile Evolution in Plasma Etching and Deposition
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Self-Consistent Modeling of Feature Profile Evolution in Plasma Etching and Deposition

Shimada, Takashi ; Yagisawa, Takashi ; Makabe, Toshiaki

Japanese Journal of Applied Physics, 2006-02, Vol.45 (2L), p.L132 [Periódico revisado por pares]

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4
Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods
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Tunable Field-Effect Transistor Device with Metallofullerene Nanopeapods

Shimada, Takashi ; Ohno, Yutaka ; Suenaga, Kazutomo ; Okazaki, Toshiya ; Kishimoto, Shigeru ; Mizutani, Takashi ; Taniguchi, Risa ; Kato, Haruhito ; Cao, Baopeng ; Sugai, Toshiki ; Shinohara, Hisanori

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1R), p.469 [Periódico revisado por pares]

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5
Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
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Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer

Shimada, Takashi ; Hasegawa, Shigehiko ; Asahi, Hajime

Japanese Journal of Applied Physics, 2005-01, Vol.44 (5L), p.L655 [Periódico revisado por pares]

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6
Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate
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Fabrication and Characterization of Peapod Field-Effect Transistors Using Peapods Synthesized Directly on Si Substrate

Kurokawa, Yuto ; Ohno, Yutaka ; Shimada, Takashi ; Ishida, Masashi ; Kishimoto, Shigeru ; Okazaki, Toshiya ; Shinohara, Hisanori ; Mizutani, Takashi

Japanese Journal of Applied Physics, 2005-01, Vol.44 (10L), p.L1341 [Periódico revisado por pares]

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7
1.3–1.5-µm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
1.3–1.5-µm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
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1.3–1.5-µm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates

Mori, Jun ; Nakano, Tomonori ; Shimada, Takashi ; Hasegawa, Shigehiko ; Asahi, Hajime

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7A), p.L901 [Periódico revisado por pares]

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8
Search for new nitrogen-doped carbon materials by compressing molecular crystals
Search for new nitrogen-doped carbon materials by compressing molecular crystals
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Search for new nitrogen-doped carbon materials by compressing molecular crystals

Yamane, Ichiro ; Yanase, Takashi ; Nagahama, Taro ; Shimada, Toshihiro

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBG13 [Periódico revisado por pares]

IOP Publishing

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9
Electrostatic model of solid-state capacitor with ionizable charge traps
Electrostatic model of solid-state capacitor with ionizable charge traps
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Electrostatic model of solid-state capacitor with ionizable charge traps

Shimada, Toshihiro ; Nagahama, Taro ; Yanase, Takashi

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8), p.88004-1-088004-2 [Periódico revisado por pares]

The Japan Society of Applied Physics

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10
Fabrication of Piezoelectric Polyurea Films by Alternating Deposition
Fabrication of Piezoelectric Polyurea Films by Alternating Deposition
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Fabrication of Piezoelectric Polyurea Films by Alternating Deposition

Yanase, Takashi ; Hasegawa, Tetsuya ; Nagahama, Taro ; Shimada, Toshihiro

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.041603-041603-4 [Periódico revisado por pares]

The Japan Society of Applied Physics

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