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Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs
Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs
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Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs

Lysenko, V.S ; Tyagulski, I.P ; Gomeniuk, Y.V ; Osiyuk, I.N

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.735-738 [Periódico revisado por pares]

Elsevier Ltd

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2
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures
Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures
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Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures

TYAGULSKYY, I. P ; OSIYUK, I. N ; LYSENKO, V. S ; NAZAROV, A. N ; HALL, S ; BUIU, O ; LU, Y ; POTTER, R ; CHALKER, P

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.726-728 [Periódico revisado por pares]

Oxford: Elsevier

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3
Charge trapping and interface states in hydrogen annealed HfO2-Si structures
Charge trapping and interface states in hydrogen annealed HfO2-Si structures
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Charge trapping and interface states in hydrogen annealed HfO2-Si structures

GOMENIUK, Y. V ; NAZAROV, A. N ; VOVK, Ya. N ; LYSENKO, V. S ; YI LU ; BUIU, O ; HALL, S ; POTTER, R. J ; CHALKER, P

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.714-717 [Periódico revisado por pares]

Oxford: Elsevier

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4
Macroscopic dielectric response of the metallic particles embedded in host dielectric medium
Macroscopic dielectric response of the metallic particles embedded in host dielectric medium
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Macroscopic dielectric response of the metallic particles embedded in host dielectric medium

Grechko, L.G. ; Whites, K.W. ; Pustovit, V.N. ; Lysenko, V.S.

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.893-895 [Periódico revisado por pares]

Elsevier Ltd

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5
Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors
Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors
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Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors

Lysenko, V.S ; Tyagulski, I.P ; Gomeniuk, Y.V ; Osiyuk, I.N

Microelectronics and reliability, 2000-04, Vol.40 (4-5), p.799-802 [Periódico revisado por pares]

Elsevier Ltd

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6
Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection
Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection
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Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

Nazarov, A.N. ; Osiyuk, I.N. ; Lysenko, V.S. ; Gebel, T. ; Rebohle, L. ; Skorupa, W.

Microelectronics and reliability, 2002-09, Vol.42 (9-11), p.1461-1464 [Periódico revisado por pares]

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7
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation
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Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation

Turchanikov, V. ; Nazarov, A. ; Lysenko, V. ; Ostahov, V. ; Winkler, O. ; Spangenberg, B. ; Kurz, H.

Microelectronics and reliability, 2007-04, Vol.47 (4), p.626-630 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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