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Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
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Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests

Marras, A. ; Impronta, M. ; De Munari, I. ; Valentini, M.G. ; Scorzoni, A.

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1492-1496 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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2
Additional microstructural analysis on the samples examined in the paper ‘Are high resolution resistometric methods really useful for the early detection of electromigration damage?’
Additional microstructural analysis on the samples examined in the paper ‘Are high resolution resistometric methods really useful for the early detection of electromigration damage?’
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Additional microstructural analysis on the samples examined in the paper ‘Are high resolution resistometric methods really useful for the early detection of electromigration damage?’

Balboni, R. ; de Munari, I. ; Impronta, M. ; Scorzoni, A.

Microelectronics and reliability, 1999, Vol.39 (4), p.537-540 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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3
A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements : Special Section : EU Research Project Prophecy Papers
A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements : Special Section : EU Research Project Prophecy Papers
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A study of the thermal behavior of different test patterns used in differential high resolution electromigration measurements : Special Section : EU Research Project Prophecy Papers

KELAIDIS, N ; SCORZONI, A ; IMPRONTA, M ; DE MUNARI, I

Microelectronics and reliability, 1999, Vol.39 (5), p.627-634 [Periódico revisado por pares]

Oxford: Elsevier

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4
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines : Special Section : EU Research Project Prophecy Papers
A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines : Special Section : EU Research Project Prophecy Papers
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A proposal for a standard procedure for moderately accelerated electromigration tests on metal lines : Special Section : EU Research Project Prophecy Papers

SCORZONI, A ; IMPRONTA, M ; DE MUNARI, I ; FANTINI, F

Microelectronics and reliability, 1999, Vol.39 (5), p.615-626 [Periódico revisado por pares]

Oxford: Elsevier

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5
Are high resolution resistometric methods really useful for the early detection of electromigration damage?
Are high resolution resistometric methods really useful for the early detection of electromigration damage?
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Are high resolution resistometric methods really useful for the early detection of electromigration damage?

Scorzoni, A. ; Franceschini, S. ; Balboni, R. ; Impronta, M. ; De Munari, I. ; Fantini, F.

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1479-1482 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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6
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines
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Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines

Scorzoni, A. ; De Munari, I. ; Balboni, R. ; Tamarri, F. ; Garulli, A. ; Fantini, F.

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1691-1694 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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7
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's: Reliability physics of advanced electron devices
Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's: Reliability physics of advanced electron devices
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Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's: Reliability physics of advanced electron devices

DE MUNARI, I ; FANTINI, F ; CONTI, P

Microelectronics and reliability, 1995, Vol.35 (3), p.631-635 [Periódico revisado por pares]

Oxford: Elsevier

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8
Design of a test structure to evaluate electro-thermomigration in power ICs
Design of a test structure to evaluate electro-thermomigration in power ICs
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Design of a test structure to evaluate electro-thermomigration in power ICs

De Munari, I. ; Speroni, F. ; Reverberi, M. ; Neva, C. ; Lonzi, L. ; Fantini, F.

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1875-1878 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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9
Electromigration in thin-films for microelectronics
Electromigration in thin-films for microelectronics
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Electromigration in thin-films for microelectronics

Baldini, G.L. ; De Munari, I. ; Scorzoni, A. ; Fantini, F.

Microelectronics and reliability, 1993, Vol.33 (11), p.1779-1805 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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10
Impact of gate-leakage currents on CMOS circuit performance
Impact of gate-leakage currents on CMOS circuit performance
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Impact of gate-leakage currents on CMOS circuit performance

Marras, Alessandro ; De Munari, Ilaria ; Vescovi, Davide ; Ciampolini, Paolo

Microelectronics and reliability, 2005-03, Vol.45 (3), p.499-506 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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