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Material Type: Artigo
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Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect TransistorsSaungeun Park ; Sangchul Lee ; Mordi, Greg ; Jandhyala, Srikar ; Min-Woo Ha ; Jang-Sik Lee ; Colombo, Luigi ; Wallace, Robert M. ; Byoung Hun Lee ; Jiyoung KimIEEE electron device letters, 2014-02, Vol.35 (2), p.277-279 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide SwitchesYou Zhou ; Xiaonan Chen ; Changhyun Ko ; Zheng Yang ; Mouli, C. ; Ramanathan, S.IEEE electron device letters, 2013-02, Vol.34 (2), p.220-222 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Attenuation of Rock Salt: Ultrasonic Lab Analysis of Gulf of Mexico Coastal SamplesZong, Jingjing ; Stewart, Robert R. ; Dyaur, NikolayJournal of geophysical research. Solid earth, 2020-07, Vol.125 (7), p.n/a [Periódico revisado por pares]Washington: Blackwell Publishing LtdTexto completo disponível |
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Material Type: Artigo
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A Wearable Combined Wrist Pulse Measurement System Using Airbags for PressurizationJin, Chenling ; Xia, Chunming ; Zhang, Shiyu ; Wang, Liren ; Wang, Yiqin ; Yan, HaixiaSensors (Basel, Switzerland), 2019-01, Vol.19 (2), p.386 [Periódico revisado por pares]Switzerland: MDPITexto completo disponível |
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Material Type: Artigo
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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random MemoryNardi, F. ; Balatti, S. ; Larentis, S. ; Gilmer, D. C. ; Ielmini, D.IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.70-77 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Identification and Compensation for D-Dot Measurement System in Transient Electromagnetic Pulse MeasurementJin, Mengzhe ; Li, Hao ; Liu, ShangheSensors (Basel, Switzerland), 2022-11, Vol.22 (21), p.8538 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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Material Type: Artigo
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A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETsSantarelli, Alberto ; Cignani, Rafael ; Gibiino, Gian Piero ; Niessen, Daniel ; Traverso, Pier Andrea ; Florian, Corrado ; Schreurs, Dominique M. M.-P ; Filicori, FabioIEEE microwave and wireless components letters, 2014-02, Vol.24 (2), p.132-134 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin FilmsNishi, Yoshifumi ; Menzel, Stephan ; Fleck, Karsten ; Böttger, Ulrich ; Waser, RainerIEEE electron device letters, 2014-02, Vol.35 (2), p.259-261 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Memristive FG-PVA Structures Fabricated with the Use of High Energy Xe Ion IrradiationIvanov, Artem I ; Antonova, Irina V ; Nebogatikova, Nadezhda A ; Olejniczak, AndrzejMaterials, 2022-03, Vol.15 (6), p.2085 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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Material Type: Artigo
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Laboratory Calibration of D-dot Sensor Based on System Identification MethodWang, Ke ; Duan, Yantao ; Shi, Lihua ; Qiu, ShiSensors (Basel, Switzerland), 2019-07, Vol.19 (15), p.3255 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |