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Material Type: Artigo
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Vertically integrated silicon-germanium nanowire field-effect transistorRosaz, G ; Salem, B ; Pauc, N ; Potié, A ; Gentile, P ; Baron, TApplied physics letters, 2011-11, Vol.99 (19), p.193107-193107-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |