Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Gettering of donor impurities by Gd in GaAsKovalenko, V ; Krasnov, V ; Malyshev, VSemiconductor science and technology, 1993-09, Vol.8 (9), p.1755-1757 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
2 |
Material Type: Artigo
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Copper nanoparticles within amorphous and crystalline dielectric matricesGURIN, V. S ; KOVALENKO, D. L ; PETRANOVSKII, V. P ; BOGDANCHIKOVA, N. EJournal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.333-336 [Periódico revisado por pares]Norwell, MA: SpringerTexto completo disponível |
3 |
Material Type: Artigo
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Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substratesIvanov, S V ; Altukhov, P D ; Argunova, T S ; Bakun, A A ; Budza, A A ; Chaldyshev, V V ; Kovalenko, Yu A ; Kop'ev, P S ; Kutt, R N ; Meltser, B Ya ; Ruvimov, S S ; Shaposhnikov, S V ; Sorokin, L M ; Ustinov, V MSemiconductor science and technology, 1993-03, Vol.8 (3), p.347-356 [Periódico revisado por pares]IOP PublishingTexto completo disponível |