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Vertically high-density interconnection for mobile application
Vertically high-density interconnection for mobile application
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Vertically high-density interconnection for mobile application

Katahira, Takayoshi ; Kartio, Ilkka ; Segawa, Hiroshi ; Takahashi, Michimasa ; Sagisaka, Katsumi

Microelectronics and reliability, 2006-05, Vol.46 (5), p.756-762 [Periódico revisado por pares]

Oxford: Elsevier Ltd

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2
Changes in effective work function of HfxRu1-x alloy gate electrode
Changes in effective work function of HfxRu1-x alloy gate electrode
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Changes in effective work function of HfxRu1-x alloy gate electrode

NABATAME, T ; NUNOSHIGE, Y ; KADOSHIMA, M ; TAKABA, H ; SEGAWA, K ; KIMURA, S ; SATAKE, H ; OTA, H ; OHISHI, T ; TORIUMI, A

Microelectronic engineering, 2008-07, Vol.85 (7), p.1524-1528 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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3
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
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The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

NABATAME, T ; SEGAWA, K ; KADOSHIMA, M ; TAKABA, H ; IWAMOTO, K ; KIMURA, S ; NUNOSHIGE, Y ; SATAKE, H ; OHISHI, T ; TORIUMI, Akira

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.975-979 [Periódico revisado por pares]

Oxford: Elsevier Science

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4
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers
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Efficient fabrication process for superconducting integrated circuits using photosensitive polyimide insulation layers

Kikuchi, K. ; Goto, M. ; Nakagawa, H. ; Segawa, S. ; Tokoro, K. ; Taino, T. ; Myoren, H. ; Takada, S. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.94-97 [Periódico revisado por pares]

New York, NY: IEEE

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5
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits
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New fabrication process for Josephson tunnel junctions using photosensitive polyimide insulation layer for superconducting integrated circuits

Kikuchi, K. ; Segawa, S. ; Eun-Sil Jung ; Nakagawa, H. ; Tokoro, K. ; Itatani, H. ; Aoyagi, M.

IEEE transactions on applied superconductivity, 2003-06, Vol.13 (2), p.119-122 [Periódico revisado por pares]

New York, NY: IEEE

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6
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization
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Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Aoyagi, Masahiro ; Segawa, Shigemasa ; Jung, EunSil ; Itatani, Taro ; Komuro, Masanori ; Sakamoto, Tsuenenori ; Itatani, Hiroshi ; Miyamura, Masataka ; Matsumoto, Shunichi

SPIE proceedings series, 2001, Vol.4345, p.1073-1078

Bellingham WA: SPIE

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7
Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques
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Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques

Sun, Handong ; Makino, Takayuki ; Nguyen, Tien T ; Segawa, Yusaburo ; Tang, ZiKang ; Wong, George K ; Kawasaki, Masashi ; Ohtomo, Akira ; Tamura, Kentaro ; Koinuma, Hideomi

SPIE proceedings series, 2001, Vol.4281, p.68-76

Bellingham WA: SPIE

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8
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
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Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation

Hori, A. ; Hiroki, A. ; Nakaoka, H. ; Segawa, M. ; Hori, T.

IEEE transactions on electron devices, 1995-01, Vol.42 (1), p.78-86 [Periódico revisado por pares]

New York, NY: IEEE

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9
Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
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Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy

Makino, Takayuki ; Sun, Handong ; Nguyen, Tien T ; Segawa, Yusaburo ; Chia, Chinhau ; Kawasaki, Masashi ; Ohtomo, Akira ; Tamura, Kentaro ; Koinuma, Hideomi

SPIE proceedings series, 2001, Vol.4281, p.59-67

Bellingham WA: SPIE

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10
Fabrication and tests of a MEMS-based double-beam cantilever flow sensor with clarifying of temperature effect
Fabrication and tests of a MEMS-based double-beam cantilever flow sensor with clarifying of temperature effect
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Fabrication and tests of a MEMS-based double-beam cantilever flow sensor with clarifying of temperature effect

Pang, Junguo ; Segawa, Takehiko ; Ikehara, Tsuyoshi ; Yoshida, Hiro ; Kikushima, Yoshihiro ; Abe, Hiroyuki ; Meada, Ryutaro

SPIE proceedings series, 2005, Vol.5649, p.253-264

Bellingham WA: SPIE

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