skip to main content
Idioma:
Refinado por: Nome da Publicação: Ieee Transactions On Nuclear Science remover idioma: Russo remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs
The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs

Pershenkov, V.S. ; Chirokov, M.S. ; Bretchko, P.T. ; Fastenko, P.O. ; Baev, V.K. ; Belyakov, V.V.

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1895-1901 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por
2
Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures
Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

Pershenkov, V.S. ; Belyakov, V.V. ; Shalnov, A.V.

IEEE transactions on nuclear science, 1994-12, Vol.41 (6), p.2593-2599 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.