Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Ata de Congresso
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Electrical properties and crystallization behavior of SbxSe100-x thin filmsKANG, M. J ; PARK, T. J ; WAMWANGI, D ; WANG, K ; STEIMER, C ; CHOI, S. Y ; WUTTIG, MMicrosystem technologies, 2007, Vol.13 (2), p.153-159 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
12 |
Material Type: Ata de Congresso
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Soft X-ray Absorption and Photoemission Spectroscopy Study of Cobalt-Based Thermoelectric Oxides: Ca3CO4O9, Ca3Co2O6, and Bi2Sr2Co2OyKANG, J.-S ; LEE, H. J ; KIM, D. H ; FUJII, T ; TERASAKI, I ; PARK, H. L ; JEONG, Y. H ; MIN, B. IJournal of electronic materials, 2009, Vol.38 (7), p.1127-1131 [Periódico revisado por pares]Heidelberg: SpringerTexto completo disponível |
13 |
Material Type: Ata de Congresso
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Assessment of tight pixel geometry influence on surface chemistry of Hg1-xCdxTe focal plane array by time of flight-secondary ion mass spectroscopy : Novel analytical methodsGARWOOD, G ; OLSHOVE, R ; PETTIJOHN, E ; BANGS, J ; LIGUORI, M ; OLSON, E ; LUA, FJournal of electronic materials, 2007, Vol.36 (8), p.937-948 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
14 |
Material Type: Ata de Congresso
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Accurate determination of the matrix composition profile of Hg1-xCdxTe by secondary ion mass spectrometryWANG, Larry ; WANG, Alice ; PRICE, SteveJournal of electronic materials, 2007, Vol.36 (8), p.910-912 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
15 |
Material Type: Ata de Congresso
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Modeling strategies for fabrics unit cell geometry-Application to permeability simulationsHivet, Gilles ; Wendling, Audrey ; Vidal-Salle, Emmanuelle ; Laine, B. ; Boisse, PhilippeInternational Journal of Material Forming, 2010, Vol.3 (1 supplément), p.727-730 [Periódico revisado por pares]Springer VerlagTexto completo disponível |
16 |
Material Type: Ata de Congresso
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Characterization of physical-chemical drivers of Hg1-xCdxTe etch rate using time of flight-secondary ion mass spectrometry and optical interferometryOLSHOVE, R ; GARWOOD, G ; PETTIJOHN, E ; EMERSON, R ; LUA, F ; OLSON, E ; BANGS, JJournal of electronic materials, 2006, Vol.35 (6), p.1185-1191 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
17 |
Material Type: Ata de Congresso
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Laser processing of BN and AlN filmsNARAYAN, J ; WU, H ; VISPUTE, R. DJournal of electronic materials, 1996, Vol.25 (1), p.143-149 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
18 |
Material Type: Ata de Congresso
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AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliabilityMIYA, S ; MURAMATSU, S ; KUZE, N ; NAGASE, K ; IWABUCHI, T ; ICHII, A ; OZAKI, M ; SHIBASAKI, IJournal of electronic materials, 1996, Vol.25 (3), p.415-420 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
19 |
Material Type: Ata de Congresso
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Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scatteringTABUCHI, M ; YAMADA, N ; FUJIBAYASHI, K ; TAKEDA, Y ; KAMEI, HJournal of electronic materials, 1996, Vol.25 (4), p.671-675 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
20 |
Material Type: Ata de Congresso
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Adhesion of Ni-structures on Al2O3 ceramic substrates used for the sacrificial layer techniqueKUNZ, T ; MOHR, J ; RUZZU, A ; SKROBANEK, K. D ; WALLRABE, UMicrosystem technologies, 2000, Vol.6 (4), p.121-125 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |