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1
Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer
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Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Liu, Dan-Dan ; Liu, Wen-Jun ; Pei, Jun-Xiang ; Xie, Lin-Yan ; Huo, Jingyong ; Wu, Xiaohan ; Ding, Shi-Jin

Nanoscale research letters, 2019-12, Vol.14 (1), p.363-8, Article 363 [Periódico revisado por pares]

New York: Springer US

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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Peng, Yue ; Han, Genquan ; Liu, Fenning ; Xiao, Wenwu ; Liu, Yan ; Zhong, Ni ; Duan, Chungang ; Feng, Ze ; Dong, Hong ; Hao, Yue

Nanoscale research letters, 2020-06, Vol.15 (1), p.134-134, Article 134 [Periódico revisado por pares]

New York: Springer US

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3
Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition
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Electrical and Optical Properties of Nb-doped SrSnO3 Epitaxial Films Deposited by Pulsed Laser Deposition

Li, Kaifeng ; Gao, Qiang ; Zhao, Li ; Liu, Qinzhuang

Nanoscale research letters, 2020-08, Vol.15 (1), p.164-164, Article 164 [Periódico revisado por pares]

New York: Springer US

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4
High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
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High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation

Liu, Huan ; Han, Genquan ; Liu, Yan ; Tang, Xiaosheng ; Yang, Jingchen ; Hao, Yue

Nanoscale research letters, 2019-01, Vol.14 (1), p.15-15, Article 15 [Periódico revisado por pares]

New York: Springer US

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5
A Multi-level Memristor Based on Al-Doped HfO2 Thin Film
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A Multi-level Memristor Based on Al-Doped HfO2 Thin Film

Wu, Lei ; Liu, Hongxia ; Li, Jiabin ; Wang, Shulong ; Wang, Xing

Nanoscale research letters, 2019-05, Vol.14 (1), p.1-7, Article 177 [Periódico revisado por pares]

New York: Springer US

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6
Exploring the efficacy of subwavelength gratings as short-wavelength infrared filters
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Exploring the efficacy of subwavelength gratings as short-wavelength infrared filters

Liu, Hezhuang ; Huang, Yixuan ; Wu, Jiang

Discover nano, 2024-06, Vol.19 (1), p.104-7 [Periódico revisado por pares]

New York: Springer US

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7
A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer
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A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer

Chang, Yao-Wen ; Wu, Ping-Chun ; Yi, Jhih-Bang ; Liu, Yu-Chen ; Chou, Yi ; Chou, Yi-Chia ; Yang, Jan-Chi

Nanoscale research letters, 2020-08, Vol.15 (1), p.172-172, Article 172 [Periódico revisado por pares]

New York: Springer US

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8
Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition
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Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Zhai, Chen-Hui ; Zhang, Rong-Jun ; Chen, Xin ; Zheng, Yu-Xiang ; Wang, Song-You ; Liu, Juan ; Dai, Ning ; Chen, Liang-Yao

Nanoscale research letters, 2016-12, Vol.11 (1), p.407-8, Article 407 [Periódico revisado por pares]

New York: Springer US

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9
Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure
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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure

Zhang, Siqing ; Liu, Yan ; Zhou, Jiuren ; Ma, Meng ; Gao, Anyuan ; Zheng, Binjie ; Li, Lingfei ; Su, Xin ; Han, Genquan ; Zhang, Jincheng ; Shi, Yi ; Wang, Xiaomu ; Hao, Yue

Nanoscale research letters, 2020-08, Vol.15 (1), p.157-157, Article 157 [Periódico revisado por pares]

New York: Springer US

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10
A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD
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A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

Wang, Yuwei ; Liu, Hong ; Shen, Wenzhong

Nanoscale research letters, 2018-08, Vol.13 (1), p.234-9, Article 234 [Periódico revisado por pares]

New York: Springer US

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