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Refinado por: Nome da Publicação: Physica Status Solidi. A, Applied Research remover idioma: Alemão remover
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Studies on CdSxSe1−x films prepared by two-zone hot wall technique
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Studies on CdSxSe1−x films prepared by two-zone hot wall technique

Dutta, J. ; Pal, R. ; Chattopadhyay, S. ; Chaudhuri, S. ; Pal, A. K.

Physica status solidi. A, Applied research, 1993-09, Vol.139 (1), p.109-118

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Effect of deep level impurities on the grain boundary potential of a polycrystalline semiconductor
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Effect of deep level impurities on the grain boundary potential of a polycrystalline semiconductor

Chattopadhyay, P. ; Haldar, D. P. ; Chakrabarti, S. ; Ray, M.

Physica status solidi. A, Applied research, 1994-03, Vol.142 (1), p.117-125

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Effect of energy distribution of interface states on the capacitance and conductance of Schottky barrier and MIS tunnel contacts
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Effect of energy distribution of interface states on the capacitance and conductance of Schottky barrier and MIS tunnel contacts

Raychaudhuri, B. ; Chattopadhyay, P.

Physica status solidi. A, Applied research, 1994-01, Vol.141 (1), p.K71-K75

Berlin: WILEY-VCH Verlag

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Optical Properties of CuInSe2 Films near the Fundamental Absorption Edge
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Optical Properties of CuInSe2 Films near the Fundamental Absorption Edge

Chattopadhyay, K. K. ; Sanyal, I. ; Bhattacharya, S. K. ; Chaudhuri, S. ; Pal, A. K.

Physica status solidi. A, Applied research, 1991-06, Vol.125 (2), p.707-714

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