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Digital enhancement brings reel improvement
Digital enhancement brings reel improvement
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Digital enhancement brings reel improvement

The Engineer, 2004-02, Vol.293 (7644), p.13

London: Centaur Communications Limited

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12
Lateral magma flow in mafic sill complexes
Lateral magma flow in mafic sill complexes
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Lateral magma flow in mafic sill complexes

Magee, Craig ; Muirhead, James D ; Karvelas, Alex ; Holford, Simon P ; Jackson, Christopher A. L ; Bastow, Ian D ; Schofield, Nick ; Stevenson, Carl T. E ; McLean, Charlotte ; McCarthy, William ; Shtukert, Olga

Geosphere (Boulder, Colo.), 2016-06, Vol.12 (3), p.809-841 [Periódico revisado por pares]

Geological Society of America

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13
Advanced Tissue Sciences and BioNuvia
Advanced Tissue Sciences and BioNuvia
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Advanced Tissue Sciences and BioNuvia

Dermatology times, 2002-06, Vol.23 (6), p.66

Intellisphere, LLC

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14
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
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Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

Borong Hu ; Ortiz Gonzalez, Jose ; Li Ran ; Hai Ren ; Zheng Zeng ; Wei Lai ; Bing Gao ; Alatise, Olayiwola ; Hua Lu ; Bailey, Christopher ; Mawby, Phil

IEEE transactions on device and materials reliability, 2017-12, Vol.17 (4), p.727-737 [Periódico revisado por pares]

New York: IEEE

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15
A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device
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A First-Principles Study of the SF6 Decomposed Products Adsorbed Over Defective WS2 Monolayer as Promising Gas Sensing Device

Chen, Dachang ; Zhang, Xiaoxing ; Xiong, Hao ; Li, Yi ; Tang, Ju ; Xiao, Song ; Zhang, Dongzhi

IEEE transactions on device and materials reliability, 2019-09, Vol.19 (3), p.473-483 [Periódico revisado por pares]

New York: IEEE

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16
Structure of oceanic crust and serpentinization at subduction trenches
Structure of oceanic crust and serpentinization at subduction trenches
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Structure of oceanic crust and serpentinization at subduction trenches

Grevemeyer, Ingo ; Ranero, Cesar R ; Ivandic, Monika

Geosphere (Boulder, Colo.), 2018-04, Vol.14 (2), p.395-418 [Periódico revisado por pares]

Geological Society of America

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17
Detrital zircon U-Pb geochronology and Hf isotope geochemistry of Paleozoic and Triassic passive margin strata of western North America
Detrital zircon U-Pb geochronology and Hf isotope geochemistry of Paleozoic and Triassic passive margin strata of western North America
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Detrital zircon U-Pb geochronology and Hf isotope geochemistry of Paleozoic and Triassic passive margin strata of western North America

Gehrels, George ; Pecha, Mark

Geosphere (Boulder, Colo.), 2014-02, Vol.10 (1), p.49-65, Article 49 [Periódico revisado por pares]

Geological Society of America

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18
Introduction: Active Margins in Transition—Magmatism and Tectonics through Time: An Issue in Honor of Arthur W. Snoke
Introduction: Active Margins in Transition—Magmatism and Tectonics through Time: An Issue in Honor of Arthur W. Snoke
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Introduction: Active Margins in Transition—Magmatism and Tectonics through Time: An Issue in Honor of Arthur W. Snoke

McGrew, Allen J. ; Schwartz, Joshua J.

Geosphere (Boulder, Colo.), 2021-08, Vol.17 (4), p.981-986 [Periódico revisado por pares]

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19
Evaluating the effectiveness of spatial training for introductory geology students
Evaluating the effectiveness of spatial training for introductory geology students
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Evaluating the effectiveness of spatial training for introductory geology students

Klyce, Annie ; Ryker, Katherine

Geosphere (Boulder, Colo.), 2024-04, Vol.20 (2), p.350-366 [Periódico revisado por pares]

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20
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability
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Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

Madan, Jaya ; Chaujar, Rishu

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.227-234 [Periódico revisado por pares]

New York: IEEE

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