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Electron Trap Dynamics in Polymer Light‐Emitting Diodes
Electron Trap Dynamics in Polymer Light‐Emitting Diodes
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Electron Trap Dynamics in Polymer Light‐Emitting Diodes

Diethelm, Matthias ; Bauer, Michael ; Hu, Wei‐Hsu ; Vael, Camilla ; Jenatsch, Sandra ; Blom, Paul W. M. ; Nüesch, Frank ; Hany, Roland

Advanced functional materials, 2022-07, Vol.32 (27), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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Modelling of Surface Trapping Effect on Charge Accumulation Pattern at Gas-Solid Interface in DC GIL
Modelling of Surface Trapping Effect on Charge Accumulation Pattern at Gas-Solid Interface in DC GIL
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Modelling of Surface Trapping Effect on Charge Accumulation Pattern at Gas-Solid Interface in DC GIL

Wang, Zheming ; Wang, Yaogang ; Ding, Hao ; Jia, Bowen ; Zhou, Wenqiang ; Lu, Wu ; Liu, Yongsheng

IEEE transactions on dielectrics and electrical insulation, 2024-02, Vol.31 (1), p.1-1 [Periódico revisado por pares]

New York: IEEE

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3
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
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Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Meng Duan ; Jian Fu Zhang ; Zhigang Ji ; Wei Dong Zhang ; Vigar, David ; Asenov, Asen ; Gerrer, Louis ; Chandra, Vikas ; Aitken, Rob ; Kaczer, Ben

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3642-3648 [Periódico revisado por pares]

New York: IEEE

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4
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
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Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

Gelczuk, Ł. ; Dąbrowska-Szata, M. ; Sochacki, M. ; Szmidt, J.

Solid-state electronics, 2014-04, Vol.94, p.56-60 [Periódico revisado por pares]

Kidlington: Elsevier Ltd

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5
Understanding the Effects of NaCl, NaBr and Their Mixtures on Silver Nanowire Nucleation and Growth in Terms of the Distribution of Electron Traps in Silver Halide Crystals
Understanding the Effects of NaCl, NaBr and Their Mixtures on Silver Nanowire Nucleation and Growth in Terms of the Distribution of Electron Traps in Silver Halide Crystals
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Understanding the Effects of NaCl, NaBr and Their Mixtures on Silver Nanowire Nucleation and Growth in Terms of the Distribution of Electron Traps in Silver Halide Crystals

Rui, Yunjun ; Zhao, Weiliang ; Zhu, Dewei ; Wang, Hengyu ; Song, Guangliang ; Swihart, Mark T ; Wan, Neng ; Gu, Dawei ; Tang, Xiaobing ; Yang, Ying ; Zhang, Tianyou

Nanomaterials (Basel, Switzerland), 2018-03, Vol.8 (3), p.161 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- \kappa Intergate Dielectrics of Flash Memory Cells
Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- \kappa Intergate Dielectrics of Flash Memory Cells
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Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High- \kappa Intergate Dielectrics of Flash Memory Cells

Baojun Tang ; Wei Dong Zhang ; Degraeve, Robin ; Breuil, Laurent ; Blomme, Pieter ; Jian Fu Zhang ; Zhigang Ji ; Zahid, Mohammed ; Toledano-Luque, Maria ; Van den Bosch, Geert ; Van Houdt, Jan

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1299-1306 [Periódico revisado por pares]

New York: IEEE

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7
Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures
Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures
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Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

Ishida, T. ; Mine, T. ; Hisamoto, D. ; Shimamoto, Y. ; Yamada, R.

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.863-869 [Periódico revisado por pares]

New York, NY: IEEE

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8
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation
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Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation

Zhou, Longda ; Li, Jie ; Qiao, Zheng ; Ren, Pengpeng ; Sun, Zixuan ; Wang, Jianping ; Wu, Blacksmith ; Ji, Zhigang ; Wang, Runsheng ; Cao, Kanyu ; Huang, Ru

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-10

IEEE

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9
3-D NAND Technology Achievements and Future Scaling Perspectives
3-D NAND Technology Achievements and Future Scaling Perspectives
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3-D NAND Technology Achievements and Future Scaling Perspectives

Goda, Akira

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1373-1381 [Periódico revisado por pares]

New York: IEEE

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10
Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High- \kappa Interpoly Gate Dielectric Stacks
Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High- \kappa Interpoly Gate Dielectric Stacks
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Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells With High- \kappa Interpoly Gate Dielectric Stacks

Baojun Tang ; Robinson, C. ; Wei Dong Zhang ; Jian Fu Zhang ; Degraeve, R. ; Blomme, P. ; Toledano-Luque, M. ; Van den bosch, G. ; Govoreanu, B. ; Van Houdt, J.

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2261-2267 [Periódico revisado por pares]

New York, NY: IEEE

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