Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gateYU, W ; ZHANG, B ; BOURDELLE, K. K ; WANG, X ; MANTL, S ; ZHAO, Q. T ; HARTMANN, J.-M ; BUCA, D ; NICHAU, A ; LUPTAK, R ; LOPES, J. M ; LENK, S ; LUYSBERG, MSolid-state electronics, 2011-08, Vol.62 (1), p.185-188 [Periódico revisado por pares]Kidlington: ElsevierTexto completo disponível |
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2 |
Material Type: Artigo
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High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stackMINAMISAWA, R. A ; SCHMIDT, M ; DURGUN ÖZBEN, E ; LOPES, J. M. J ; HARTMANN, J. M ; BOURDELLE, K. K ; SCHUBERT, J ; ZHAO, Q. T ; BUCA, D ; MANTL, SMicroelectronic engineering, 2011-09, Vol.88 (9), p.2955-2958 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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3 |
Material Type: Artigo
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Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacksMITROVIC, I. Z ; SIMUTIS, G ; DAVEY, W. M ; SEDGHI, N ; HALL, S ; DHANAK, V. R ; ALEXANDROU, I ; WANG, Q ; LOPES, J. M. J ; SCHUBERT, JMicroelectronic engineering, 2011-07, Vol.88 (7), p.1495-1498 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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4 |
Material Type: Artigo
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LaScO3 as a higher-κ dielectric for p-MOSFETsDURGUN ÖZBEN, E ; SCHNEE, M ; MANTL, S ; NICHAU, A ; MUSSMANN, V ; LUPTAK, R ; LOPES, J. M. J ; LENK, St ; BOURDELLE, K. K ; ZHAO, Q. T ; SCHUBERT, JMicroelectronic engineering, 2011-07, Vol.88 (7), p.1323-1325 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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5 |
Material Type: Ata de Congresso
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Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam depositionGomeniuk, Y. Y ; Gomieniuk, Y. V. ; Nazarov, A. N. ; Raeissi, Bahman ; Cherkaoui, K. ; Monaghan, S ; Gottlob, H. D. B. ; Schmidt, M. ; Schubert, J. ; Lopes, J.M.J ; Engström, OlofECS Transactions, 2010, Vol.33 (3), p.221Texto completo disponível |
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6 |
Material Type: Artigo
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Millisecond flash-lamp annealing of LaLuO3LEHMANN, J ; SHEVCHENKO, N ; MÜCKLICH, A ; BORANY, J. V ; SKORUPA, W ; SCHUBERT, J ; LOPEZ, J. M. J ; MANTL, SMicroelectronic engineering, 2011-07, Vol.88 (7), p.1346-1348 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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7 |
Material Type: Ata de Congresso
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Rare-earth based alternative gate dielectrics for future integration in MOSFETsLopes, J.M.J. ; Durgun-Ozben, E. ; Roeckerath, M. ; Littmark, U. ; Luptak, R. ; Lenk, St ; Besmehn, A. ; Breuer, U. ; Schubert, J. ; Mantl, S.2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.99-102IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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A new expert system based control tool for power systems with large integration of PVs and wind power plantsNogaret, E. ; Stavrakakis, G. ; Bonin, J.C. ; Kariniotakis, G. ; Papadopoulos, M. ; Hatziargyriou, N. ; Papathanassiou, S. ; Gatopoulos, J. ; Karagounis, E. ; Halliday, J. ; Dutton, G. ; Pecas-Lopes, J. ; Androutsos, A. ; Pligoropoulos, P.Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.1052-1055 vol.1IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Structural investigation and sonophotocatalytic properties of the solid solutions Sr(Mo1−xWx)O4 crystals synthesized by the sonochemical methodde Sousa, P. B. ; Nogueira, I. C. ; Gusmão, G. O.M. ; Gusmão, S. B.S. ; Lopes, F. H.P. ; Sousa, B. S. ; Sczancoski, J. C. ; Gouveia, A. F. ; Cavalcante, L. S.Journal of materials science. Materials in electronics, 2022-10, Vol.33 (28), p.22127-22152 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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10 |
Material Type: Artigo
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Influence of adhesive on optical fiber-based strain measurements on printed circuit boardsFreitas, C. ; Leite, T. M. ; Lopes, H. ; Gomes, M. ; Cruz, S. ; Magalhães, R. ; Silva, A. F. ; Viana, J. C. ; Delgado, I.Journal of materials science. Materials in electronics, 2023-03, Vol.34 (8), p.699, Article 699 [Periódico revisado por pares]New York: Springer USTexto completo disponível |