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1
Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface
Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Soi mesfet modo acumulacao em 77 k impacto dos efeitos transitorios e determinacao da densidade de armadilhas de interface

João Antonio Martino 1959- Eddy Simoen; Antônio Luís Pacheco Rotondaro; Ulf Magnusson; Cor Claeys; Congresso da Sociedade Brasileira de Microeletronica (8. 1993 Campinas)

Anais Campinas : Sbmicro, 1993

Campinas Sbmicro 1993

Item não circula. Consulte sua biblioteca.(Acessar)

2
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Paula Ghedini Der Agopian; Rita Rooyackers; Eddy Simoen; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 7, p. 075012, 2018

2018

Item não circula. Consulte sua biblioteca.(Acessar)

3
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures

Márcio Dalla Valle Martino João Antonio Martino 1959-; Paula Ghedini Der Agopian; A Vandooren; Rita Rooyackers; Eddy Simoen; Cor Claeys

Semiconductor Science and Technology v. 31, n. 5, 055001, 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

4
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Rita Rooyackers; Eddy Simoen; Paula Ghedini Der Agopian; A Vandooren; João Antonio Martino 1959-

Semiconductor Science and Technology v. 32, n.5, p. 055015, 2017

2017

Item não circula. Consulte sua biblioteca.(Acessar)

5
Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k
Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; Nato Advanced Research Workshop (1998 Kyiv)

Perspectives, science and technologies for novel silicon on insulator devices Kyiv : National Academy of Sciences of Ukraine, 1998

Kyiv National Academy of Sciences of Ukraine 1998

Item não circula. Consulte sua biblioteca.(Acessar)

6
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Material Type:
Artigo 		Adicionar ao Meu Espaço

Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets

João Antonio Martino 1959- Eddy Simoen; Ulf Magnusson; Antônio Luís Pacheco Rotondaro; Cor Claeys

v.36, n.6 , p.827-32, jun. 1993 Solid State Electronics

1993

Item não circula. Consulte sua biblioteca.(Acessar)

7
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Material Type:
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Transient effects in accumulation mode p-channel soi - mosfets operating at 77k

João Antonio Martino 1959- Antônio Luís Pacheco Rotondaro; Eddy Simoen; Ulf Magnusson; Cor Claeys

New York v.41, n.4 , p.519-23, apr. 1994 Ieee Transactions on Electron Devices

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

8
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
Material Type:
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Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies

Vitor Tatsuo Itocazu Victor Sonnenberg; João Antonio Martino 1959-; Eddy Simoen; Cor Claeys

Journal of Integrated Circuits and Systems v. 12, n. 2, p. 82-88, 2017

2017

Acesso online

9
Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
Enhanced dynamic threshold voltage UTBB SOI nMOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

Kátia Regina Akemi Sasaki Matheus Barros Manini; Cor Claeys; Eddy Simoen; João Antonio Martino 1959-

Solid-State Electronics v. 112, p. 19-23, Oct 2015

2015

Item não circula. Consulte sua biblioteca.(Acessar)

10
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Material Type:
Artigo 		Adicionar ao Meu Espaço

Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets

João Antonio Martino 1959- Eddy Simoen; Ulf Magnusson; Antônio Luís Pacheco Rotondaro; Cor Claeys

v.36, n.6 , p.827-32, jun. 1993 Solid State Electronics

1993

Item não circula. Consulte sua biblioteca.(Acessar)

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