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LOW-TEMPERATURE FORMATION OF DEVICE-QUALITY SiO2/Si INTERFACES USING ELECTRON CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
LOW-TEMPERATURE FORMATION OF DEVICE-QUALITY SiO2/Si INTERFACES USING ELECTRON CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
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LOW-TEMPERATURE FORMATION OF DEVICE-QUALITY SiO2/Si INTERFACES USING ELECTRON CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

Higashi, S ; Abe, D ; Inoue, S ; Shimoda, T

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 6A, pp. 4171-4175. 2001, 2001, Vol.40 (6A), p.4171-4175 [Periódico revisado por pares]

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2
Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors
Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors
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Current Density Enhancement at Active Layer Edges in Polycrystalline Silicon Thin-Film Transistors

Kimura, Mutsumi ; Nozawa, Ryoichi ; Inoue, Satoshi ; Shimoda, Tatsuya

Japanese Journal of Applied Physics, 2001-01, Vol.40 (1A), p.L26 [Periódico revisado por pares]

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3
Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
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Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

Inoue, Satoshi ; Ohshima, Hiroyuki ; Shimoda, Tatsuya

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 11A), p.6313-6319 [Periódico revisado por pares]

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4
Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
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Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy

Inoue, Satoshi ; Kimura, Mutsumi ; Shimoda, Tatsuya

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 3), p.1168-1172 [Periódico revisado por pares]

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5
Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer
Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer
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Imprint Characteristics by Photo-Induced Solidification of Liquid Polymer

Komuro, Masanori ; Taniguchi, Jun ; Inoue, Seiji ; Kimura, Naoya ; Tokano, Yuji ; Hiroshima, Hiroshi ; Matsui, Shinji

Japanese Journal of Applied Physics, 2000-12, Vol.39 (12S), p.7075 [Periódico revisado por pares]

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6
Uniformity in Patterns Imprinted Using Photo-Curable Liquid Polymer
Uniformity in Patterns Imprinted Using Photo-Curable Liquid Polymer
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Uniformity in Patterns Imprinted Using Photo-Curable Liquid Polymer

Hiroshima, Hiroshi ; Inoue, Seiji ; Kasahara, Nobuyuki ; Taniguchi, Jun ; Miyamoto, Iwao ; Komuro, Masanori

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 6B), p.4173-4177 [Periódico revisado por pares]

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7
OPTICAL FUSE BY CARBON-COATED TeO2 GLASS SEGMENT INSERTED IN SILICA GLASS OPTICAL FIBER CIRCUIT
OPTICAL FUSE BY CARBON-COATED TeO2 GLASS SEGMENT INSERTED IN SILICA GLASS OPTICAL FIBER CIRCUIT
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OPTICAL FUSE BY CARBON-COATED TeO2 GLASS SEGMENT INSERTED IN SILICA GLASS OPTICAL FIBER CIRCUIT

Todoroki, S ; Inoue, S

Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 2B, pp. L256-L257. 2004, 2004-02, Vol.43 (2B), p.L256-L257 [Periódico revisado por pares]

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8
Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process
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Study of Degradation Phenomenon Due to a Combination of Contamination and Self-Heating in Poly-Si Thin Film Transistors Fabricated by a Low-Temperature Process

Inoue, Satoshi ; Takenaka, Satoshi ; Shimoda, Tatsuya

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 7A), p.4213-4217 [Periódico revisado por pares]

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9
Effects of Capping Layer on Grain Growth with µ-Czochralski Process during Excimer Laser Crystallization
Effects of Capping Layer on Grain Growth with µ-Czochralski Process during Excimer Laser Crystallization
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Effects of Capping Layer on Grain Growth with µ-Czochralski Process during Excimer Laser Crystallization

He, Ming ; Ishihara, Ryoichi ; Hiroshima, Yasushi ; Inoue, Satoshi ; Shimoda, Tatsuya ; Metselaar, Wim ; Beenakker, Kees

Japanese Journal of Applied Physics, 2006-01, Vol.45 (1R), p.1 [Periódico revisado por pares]

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10
Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors
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Extraction of Trap Densities at Front and Back Interfaces in Thin-Film Transistors

Kimura, Mutsumi ; Tam, Simon W.-B. ; Inoue, Satoshi ; Shimoda, Tatsuya

Japanese Journal of Applied Physics, 2004-01, Vol.43 (1), p.71-76 [Periódico revisado por pares]

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