Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Combined electrochemical atomic layer epitaxy and microcontact printing techniquesCarlà, F. ; Innocenti, M. ; Loglio, F. ; Muniz-Miranda, M. ; Salvi, P.R. ; Gellini, C. ; Cavallini, M. ; Felici, R. ; Lastraioli, E. ; Salvietti, E. ; Foresti, M.L.Materials science in semiconductor processing, 2009-02, Vol.12 (1), p.21-24 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
2 |
Material Type: Artigo
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Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxideFabbri, F. ; Cavallini, A. ; Attolini, G. ; Rossi, F. ; Salviati, G. ; Dierre, B. ; Fukata, N. ; Sekiguchi, T.Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.179-181 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
3 |
Material Type: Artigo
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Oxygen precipitate precursors and low temperature gettering processes. II. DLTS analysis of deep levels associated to oxide precipitatesYakimov, E. ; Feklisova, D. ; Castaldini, A. ; Cavallini, A. ; Cadeo, S. ; Pizzini, S.Materials science in semiconductor processing, 1999-04, Vol.2 (1), p.69-74 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
4 |
Material Type: Artigo
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Correlation for Condensation Heat Transfer in a 4.0 mm Smooth Tube and Relationship with R1234ze(E), R404A, and R290Inoue, Norihiro ; Hirose, Masataka ; Jige, Daisuke ; Ichinose, JunyaApplied sciences, 2018-11, Vol.8 (11), p.2267 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
5 |
Material Type: Artigo
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Surface properties of AlInGaN/GaN heterostructureMinj, A. ; Skuridina, D. ; Cavalcoli, D. ; Cros, A. ; Vogt, P. ; Kneissl, M. ; Giesen, C. ; Heuken, M.Materials science in semiconductor processing, 2016-11, Vol.55, p.26-31 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
6 |
Material Type: Artigo
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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier DiodesParadzah, A. T. ; Omotoso, E. ; Legodi, M. J. ; Auret, F. D. ; Meyer, W. E. ; Diale, M.Journal of electronic materials, 2016-08, Vol.45 (8), p.4177-4182 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
7 |
Material Type: Artigo
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Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer ThicknessÇörekçi, S. ; Dugan, S. ; Öztürk, M. K. ; Çetin, S. Ş. ; Çakmak, M. ; Özçelik, S. ; Özbay, E.Journal of electronic materials, 2016-07, Vol.45 (7), p.3278-3284 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
8 |
Material Type: Artigo
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Experimental Study of Condensation Heat Transfer and Pressure Drop inside a Small Diameter Microfin and Smooth Tube at Low Mass Flux ConditionBashar, M. Khairul ; Nakamura, Keisuke ; Kariya, Keishi ; Miyara, AkioApplied sciences, 2018-11, Vol.8 (11), p.2146 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
9 |
Material Type: Artigo
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FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometryJelmakas, E. ; Kadys, A. ; Dmukauskas, M. ; Grinys, T. ; Tomašiūnas, R. ; Dobrovolskas, D. ; Gervinskas, G. ; Juodkazis, S. ; Talaikis, M. ; Niaura, G.Journal of materials science. Materials in electronics, 2021-06, Vol.32 (11), p.14532-14541 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
10 |
Material Type: Artigo
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Assessment of Terrorism Risk to Critical Infrastructures: The Case of a Power-Supply SubstationYao, Xijun ; Wei, Hsi-Hsien ; Shohet, Igal M. ; Skibniewski, Miroslaw J.Applied sciences, 2020-10, Vol.10 (20), p.7162 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |