Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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An addressable quantum dot qubit with fault-tolerant control-fidelityVeldhorst, M ; Hwang, J C C ; Yang, C H ; Leenstra, A W ; de Ronde, B ; Dehollain, J P ; Muhonen, J T ; Hudson, F E ; Itoh, K M ; Morello, A ; Dzurak, A SNature nanotechnology, 2014-12, Vol.9 (12), p.981-985 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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2 |
Material Type: Artigo
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Spin-orbit coupling and operation of multivalley spin qubitsVeldhorst, M. ; Ruskov, R. ; Yang, C. H. ; Hwang, J. C. C. ; Hudson, F. E. ; Flatté, M. E. ; Tahan, C. ; Itoh, K. M. ; Morello, A. ; Dzurak, A. S.Physical review. B, 2015-11, Vol.92 (20), Article 201401 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Andreev bound states and current-phase relations in three-dimensional topological insulatorsSnelder, M. ; Veldhorst, M. ; Golubov, A. A. ; Brinkman, A.Physical review. B, Condensed matter and materials physics, 2013-03, Vol.87 (10), Article 104507 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum DotsLawrie, W. I. L ; Hendrickx, N. W ; van Riggelen, F ; Russ, M ; Petit, L ; Sammak, A ; Scappucci, G ; Veldhorst, MNano letters, 2020-10, Vol.20 (10), p.7237-7242 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Josephson supercurrent through a topological insulator surface stateVeldhorst, M ; Snelder, M ; Hoek, M ; Gang, T ; Guduru, V K ; Wang, X L ; Zeitler, U ; van der Wiel, W G ; Golubov, A A ; Hilgenkamp, H ; Brinkman, ANature materials, 2012-05, Vol.11 (5), p.417-421 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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6 |
Material Type: Artigo
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Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum DotsEenink, H. G. J ; Petit, L ; Lawrie, W. I. L ; Clarke, J. S ; Vandersypen, L. M. K ; Veldhorst, MNano letters, 2019-12, Vol.19 (12), p.8653-8657 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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Light effective hole mass in undoped Ge/SiGe quantum wellsLodari, M. ; Tosato, A. ; Sabbagh, D. ; Schubert, M. A. ; Capellini, G. ; Sammak, A. ; Veldhorst, M. ; Scappucci, G.Physical review. B, 2019-07, Vol.100 (4), p.041304(R), Article 041304 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulatorsVeldhorst, M. ; Snelder, M. ; Hoek, M. ; Molenaar, C. G. ; Leusink, D. P. ; Golubov, A. A. ; Hilgenkamp, H. ; Brinkman, A.Physica status solidi. PSS-RRL. Rapid research letters, 2013-02, Vol.7 (1-2), p.26-38 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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9 |
Material Type: Artigo
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Impact of valley phase and splitting on readout of silicon spin qubitsTagliaferri, M. L. V. ; Bavdaz, P. L. ; Huang, W. ; Dzurak, A. S. ; Culcer, D. ; Veldhorst, M.Physical review. B, 2018-06, Vol.97 (24), Article 245412 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Ballistic supercurrent discretization and micrometer-long Josephson coupling in germaniumHendrickx, N. W. ; Tagliaferri, M. L. V. ; Kouwenhoven, M. ; Li, R. ; Franke, D. P. ; Sammak, A. ; Brinkman, A. ; Scappucci, G. ; Veldhorst, M.Physical review. B, 2019-02, Vol.99 (7), p.075435, Article 075435 [Periódico revisado por pares]College Park: American Physical SocietyTexto completo disponível |