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Improvement of the uniformity of structural and electrical properties of transparent conductive Al-doped ZnO thin films by inductively coupled plasma-assisted radio frequency magnetron sputtering
Improvement of the uniformity of structural and electrical properties of transparent conductive Al-doped ZnO thin films by inductively coupled plasma-assisted radio frequency magnetron sputtering
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Improvement of the uniformity of structural and electrical properties of transparent conductive Al-doped ZnO thin films by inductively coupled plasma-assisted radio frequency magnetron sputtering

Mian, Md. Suruz ; Nakano, Takeo ; Okimura, Kunio

Thin solid films, 2023-03, Vol.769, p.139752, Article 139752 [Periódico revisado por pares]

Elsevier B.V

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2
Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma
Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma
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Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma

Ishii, Yuki ; Kaneko, Tetsuya ; Okimura, Kunio ; Shindo, Haruo ; Isomura, Masao

Thin solid films, 2017-02, Vol.624, p.49-53 [Periódico revisado por pares]

Elsevier B.V

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3
Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO2 films
Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO2 films
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Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO2 films

Mian, Md. Suruz ; Okimura, Kunio ; Kohzaki, Masao

Thin solid films, 2017-08, Vol.636, p.63-69 [Periódico revisado por pares]

Elsevier B.V

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4
Low-temperature growth of VO2 films on transparent ZnO/glass and Al-doped ZnO/glass and their optical transition properties
Low-temperature growth of VO2 films on transparent ZnO/glass and Al-doped ZnO/glass and their optical transition properties
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Low-temperature growth of VO2 films on transparent ZnO/glass and Al-doped ZnO/glass and their optical transition properties

Sato, Kenta ; Hoshino, Hiroaki ; Mian, Md. Suruz ; Okimura, Kunio

Thin solid films, 2018-04, Vol.651, p.91-96 [Periódico revisado por pares]

Elsevier B.V

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5
Oriented growth of VO2(B) thin films on Mo foils by reactive sputtering for lithium ion batteries
Oriented growth of VO2(B) thin films on Mo foils by reactive sputtering for lithium ion batteries
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Oriented growth of VO2(B) thin films on Mo foils by reactive sputtering for lithium ion batteries

Su, Kui ; Naka, Takuya ; Azhan, Nurul Hanis ; Okimura, Kunio ; Higuchi, Masashi

Thin solid films, 2016-10, Vol.616, p.95-100 [Periódico revisado por pares]

Elsevier B.V

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6
Growth of VO2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering
Growth of VO2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering
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Growth of VO2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering

OKIMURA, Kunio ; KUBO, Naotaka

Thin solid films, 2007-04, Vol.515 (12), p.4992-4995 [Periódico revisado por pares]

Lausanne: Elsevier Science

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7
Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal-insulator transition
Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal-insulator transition
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Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO2 films with metal-insulator transition

NIHEI, Yusuke ; SASAKAWA, Yusuke ; OKIMURA, Kunio

Thin solid films, 2008-04, Vol.516 (11), p.3572-3576 [Periódico revisado por pares]

Lausanne: Elsevier Science

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8
Growth of VO 2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering
Growth of VO 2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering
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Growth of VO 2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering

Okimura, Kunio ; Kubo, Naotaka

Thin solid films, 2007, Vol.515 (12), p.4992-4995 [Periódico revisado por pares]

Elsevier B.V

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9
Characteristics of rutile TiO2 films prepared by r.f. magnetron sputtering at a low temperature
Characteristics of rutile TiO2 films prepared by r.f. magnetron sputtering at a low temperature
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Characteristics of rutile TiO2 films prepared by r.f. magnetron sputtering at a low temperature

Okimura, Kunio ; Maeda, Naohiro ; Shibata, Akira

Thin solid films, 1996-08, Vol.281-282, p.427-430 [Periódico revisado por pares]

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10
Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO 2 films with metal–insulator transition
Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO 2 films with metal–insulator transition
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Advantages of inductively coupled plasma-assisted sputtering for preparation of stoichiometric VO 2 films with metal–insulator transition

Nihei, Yusuke ; Sasakawa, Yusuke ; Okimura, Kunio

Thin solid films, 2008, Vol.516 (11), p.3572-3576 [Periódico revisado por pares]

Elsevier B.V

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