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Interactive Lattice and Process-Stress Responses in the Sub-7 nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET
Interactive Lattice and Process-Stress Responses in the Sub-7 nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET
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Interactive Lattice and Process-Stress Responses in the Sub-7 nm Germanium-Based Three-Dimensional Transistor Architecture of FinFET and Nanowire GAAFET

Lee, Chang-Chun ; Huang, Pei-Chen ; Hsiang, Te-Pei

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6552-6560 [Periódico revisado por pares]

New York: IEEE

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12
Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs
Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs
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Source/Drain Extension Doping Engineering for Variability Suppression and Performance Enhancement in 3-nm Node FinFETs

Lu, Peng ; Colombeau, Benjamin ; Hung, Steven ; Li, Weicong ; Duan, Xicheng ; Li, Yifei ; Bazizi, El Mehdi ; Natarajan, Sanjay ; Woo, Jason C. S.

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1352-1357 [Periódico revisado por pares]

IEEE

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13
Monolithically Cointegrated Tensile Strained Germanium and InxGa1-xAs FinFETs for Tunable CMOS Logic
Monolithically Cointegrated Tensile Strained Germanium and InxGa1-xAs FinFETs for Tunable CMOS Logic
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Monolithically Cointegrated Tensile Strained Germanium and InxGa1-xAs FinFETs for Tunable CMOS Logic

Joshi, Rutwik ; Karthikeyan, Sengunthar ; Hudait, Mantu K.

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4175-4182 [Periódico revisado por pares]

New York: IEEE

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14
Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs
Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs
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Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs

Chang, Wen-Teng ; Shih, Cheng-Ting ; Wu, Jhao-Lin ; Lin, Shih-Wei ; Cin, Li-Gong ; Yeh, Wen-Kuan

IEEE transactions on nanotechnology, 2018-01, Vol.17 (1), p.36-40 [Periódico revisado por pares]

New York: IEEE

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15
FinFET Fin-Trimming During Replacement Metal Gate for an Asymmetric Device Toward STT MRAM Performance Enhancement
FinFET Fin-Trimming During Replacement Metal Gate for an Asymmetric Device Toward STT MRAM Performance Enhancement
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FinFET Fin-Trimming During Replacement Metal Gate for an Asymmetric Device Toward STT MRAM Performance Enhancement

Singh, Roopesh ; Verma, Shivam ; Mittal, Sushant

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6699-6704 [Periódico revisado por pares]

IEEE

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16
Performance Analysis and Optimization of Under-Gate Dielectric Modulated Junctionless FinFET Biosensor
Performance Analysis and Optimization of Under-Gate Dielectric Modulated Junctionless FinFET Biosensor
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Performance Analysis and Optimization of Under-Gate Dielectric Modulated Junctionless FinFET Biosensor

Sehgal, Himani Dua ; Pratap, Yogesh ; Gupta, Mridula ; Kabra, Sneha

IEEE sensors journal, 2021-09, Vol.21 (17), p.18897-18904 [Periódico revisado por pares]

New York: IEEE

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17
Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFET
Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFET
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Statistical Dependence of Gate Metal Work Function on Various Electrical Parameters for an n-Channel Si Step-FinFET

Saha, Rajesh ; Bhowmick, Brinda ; Baishya, Srimanta

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.969-976 [Periódico revisado por pares]

New York: IEEE

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18
Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits
Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits
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Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits

Liu, Yu-Wei ; Hu, Han-Wen ; Hsieh, Ping-Yi ; Chung, Hao-Tung ; Chang, Shu-Jui ; Liu, Jui-Han ; Huang, Po-Tsang ; Yang, Chih-Chao ; Shen, Chang-Hong ; Shieh, Jia-Min ; Chen, Kuan-Neng ; Hu, Chenming

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5257-5262 [Periódico revisado por pares]

New York: IEEE

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19
ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy
ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy
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ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy

Chen, Wen-Chieh ; Chen, Shih-Hung ; Chiarella, Thomas ; Hellings, Geert ; Linten, Dimitri ; Groeseneken, Guido

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5357-5362 [Periódico revisado por pares]

New York: IEEE

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20
Vertical β-Ga₂O₃ Power Transistors: A Review
Vertical β-Ga₂O₃ Power Transistors: A Review
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Vertical β-Ga₂O₃ Power Transistors: A Review

Wong, Man Hoi ; Higashiwaki, Masataka

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3925-3937 [Periódico revisado por pares]

New York: IEEE

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