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Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD
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Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCAD

Kumar, Ajay ; Gupta, Neha ; Goyal, Amit Kumar ; Massoud, Yehia

Micromachines (Basel), 2022-08, Vol.13 (9), p.1418 [Periódico revisado por pares]

Basel: MDPI AG

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2
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
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Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

Klemenschits, Xaver ; Selberherr, Siegfried ; Filipovic, Lado

Micromachines (Basel), 2018-11, Vol.9 (12), p.631 [Periódico revisado por pares]

Switzerland: MDPI AG

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3
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell
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Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell

Priya, G Lakshmi ; Rawat, Namita ; Sanagavarapu, Abhishek ; Venkatesh, M ; Andrew Roobert, A

Micromachines (Basel), 2023-01, Vol.14 (2), p.232 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length
The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length
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The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length

Saha, Priyanka ; Sankar Dhar, Rudra ; Nanda, Swagat ; Kumar, Kuleen ; Alathbah, Moath

Nanomaterials (Basel, Switzerland), 2023-11, Vol.13 (23), p.3008 [Periódico revisado por pares]

Switzerland: MDPI AG

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5
Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves
Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves
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Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic Curves

Yang, Hsin-Chia ; Chi, Sung-Ching

Applied sciences, 2022-01, Vol.12 (1), p.462 [Periódico revisado por pares]

Basel: MDPI AG

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6
Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System
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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel System

Nanda, Swagat ; Dhar, Rudra Sankar ; Awwad, Falah ; Hussein, Mousa I

Nanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1662 [Periódico revisado por pares]

Switzerland: MDPI AG

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7
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
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Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor

Yoon, Chankeun ; Moon, Seungjun ; Shin, Changhwan

Nano Convergence, 2020, 7(19), , pp.1-7 [Periódico revisado por pares]

Singapore: Springer Singapore

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8
Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET
Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET
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Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Won, Hyeonjae ; Ham, Ilsik ; Jeong, Youngseok ; Kang, Myounggon

Applied sciences, 2019-08, Vol.9 (15), p.3163 [Periódico revisado por pares]

Basel: MDPI AG

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9
Combining Chemical Functionalization and FinFET Geometry for Field Effect Sensors as Accessible Technology to Optimize pH Sensing
Combining Chemical Functionalization and FinFET Geometry for Field Effect Sensors as Accessible Technology to Optimize pH Sensing
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Combining Chemical Functionalization and FinFET Geometry for Field Effect Sensors as Accessible Technology to Optimize pH Sensing

Rani, Dipti ; Rollo, Serena ; Olthuis, Wouter ; Krishnamoorthy, Sivashankar ; Pascual García, César

Chemosensors, 2021-02, Vol.9 (2), p.20 [Periódico revisado por pares]

Basel: MDPI AG

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10
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
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Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

Xu, Buqing ; Wang, Guilei ; Du, Yong ; Miao, Yuanhao ; Wu, Yuanyuan ; Kong, Zhenzhen ; Su, Jiale ; Li, Ben ; Yu, Jiahan ; Radamson, Henry H

Nanomaterials (Basel, Switzerland), 2022-04, Vol.12 (9), p.1403 [Periódico revisado por pares]

Switzerland: MDPI AG

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