Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Comprehensive Power Gain Assessment of GaN-SOI-FinFET for Improved RF/Wireless Performance Using TCADKumar, Ajay ; Gupta, Neha ; Goyal, Amit Kumar ; Massoud, YehiaMicromachines (Basel), 2022-08, Vol.13 (9), p.1418 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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2 |
Material Type: Artigo
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High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETsWang, Mu-Chun ; Hsieh, Wen-Ching ; Lin, Chii-Ruey ; Chu, Wei-Lun ; Liao, Wen-Shiang ; Lan, Wen-HowCrystals (Basel), 2021-03, Vol.11 (3), p.262 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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3 |
Material Type: Artigo
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The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel LengthSaha, Priyanka ; Sankar Dhar, Rudra ; Nanda, Swagat ; Kumar, Kuleen ; Alathbah, MoathNanomaterials (Basel, Switzerland), 2023-11, Vol.13 (23), p.3008 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM CellPriya, G Lakshmi ; Rawat, Namita ; Sanagavarapu, Abhishek ; Venkatesh, M ; Andrew Roobert, AMicromachines (Basel), 2023-01, Vol.14 (2), p.232 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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5 |
Material Type: Artigo
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Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology Node with a Strained-Silicon Channel SystemNanda, Swagat ; Dhar, Rudra Sankar ; Awwad, Falah ; Hussein, Mousa INanomaterials (Basel, Switzerland), 2023-05, Vol.13 (10), p.1662 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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6 |
Material Type: Artigo
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Modeling of Gate Stack Patterning for Advanced Technology Nodes: A ReviewKlemenschits, Xaver ; Selberherr, Siegfried ; Filipovic, LadoMicromachines (Basel), 2018-11, Vol.9 (12), p.631 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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7 |
Material Type: Artigo
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Process Corresponding Implications Associated with a Conclusive Model-Fit Current-Voltage Characteristic CurvesYang, Hsin-Chia ; Chi, Sung-ChingApplied sciences, 2022-01, Vol.12 (1), p.462 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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8 |
Material Type: Artigo
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Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorYoon, Chankeun ; Moon, Seungjun ; Shin, ChanghwanNano Convergence, 2020, 7(19), , pp.1-7 [Periódico revisado por pares]Singapore: Springer SingaporeTexto completo disponível |
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9 |
Material Type: Artigo
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Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FETWon, Hyeonjae ; Ham, Ilsik ; Jeong, Youngseok ; Kang, MyounggonApplied sciences, 2019-08, Vol.9 (15), p.3163 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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10 |
Material Type: Artigo
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Partial Isolation Type Saddle-FinFET(Pi-FinFET) for Sub-30 nm DRAM Cell TransistorsKim, Young Kwon ; Lee, Jin Sung ; Kim, Geon ; Park, Taesik ; Kim, Hui Jung ; Cho, Young Pyo ; Park, Young June ; Lee, Myoung JinElectronics (Basel), 2019-01, Vol.8 (1), p.8 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |